The effect of dopant material to optical properties: energy band gap Tin Oxide thin film

Abstract

The synthesis of the SnO2 thin film with doped materials of aluminum, fluorin indium, a combination of aluminum and indium, a combination of aluminum and fluorine, an a combination of the three doping agents, namely aluminum, fluorine, and indium have be successfully carried out. The purpose of this synthesis is to determine the effect of the vario doping materials on the resulting bandgap energy value. The thin layer was synthesized usi the sol-gel spin coating technique with the ratio of the base material and doping material us were 95: 5% and 85: 15%. The results showed that the higher the doping materi concentration, the resulting bandgap energy value decreased. In addition, the highest bandg energy value is found in the SnO2 thin film with indium doping, namely for direct 3.62 eV (9 5% percentage) and 3.59 eV (percentage 85: 15%), while the indirect bandgap energy value 3, 92 eV (percentage 95: 5%) and 3.67 eV (percentage 85: 15%). The lowest energy band g value is found in the SnO2 thin film with a combination of the three doping aluminum, fluorin and indium, namely for direct 3.50 eV (95: 5% percentage) and 3.41 eV (percentage 85: 15% while the energy band gap value is indirect. namely 3.81 eV (percentage 95: 5%) and 3.55 e (percentage 85: 15%). All the energy band gap range in semiconductor materials.

Surface Morphology of Textured Transparent Conductive Oxide Thin Film Seen by Various Probes: Visible Light, X-rays, Electron Scattering and Contact Probe

“…For all samples, the optical band gap is below 3.5 eV. As expected, an additional doped layer slightly reduces the value of E g [ 35 ]. The index of refraction is influenced by deposition temperature.…”

High-Performance Visible Light Photodetector Based on 1D SnO2 Nanofibers with a Ti3C2Tx (MXene) Electron Transport Layer

“…In particular, the band gap of SnO 2 /MXene composite nanofibers was less owing to the existence of MXene, which has absorbance in the near-IR region in its pristine form, which is displayed in Figure S1 of the Supporting Information, so SnO 2 /MXene will have maximum absorbance in the visible region in comparison to that of pristine SnO 2 . Also, the possible doping effect of SnO 2 with F terminations of Ti 3 C 2 T x decreases the band gap, and hence, this is the possible reason for the red shift in the absorbance of SnO 2 /Ti 3 C 2 T x when compared to that of pristine SnO 2 …”

Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

“…The results of the characterization of SnO2 thin films with various types of doping consist of transmittance and absorbance. As research conducted by (Doyan, et al, 2021) the absorbance value obtained is used to obtain the energy band gap value using equation 1 . The equation consists of absorbance coefficient (α), photon energy (hυ), and constant (C).…”

“…The decrease in the energy band gap is caused by the presence of Aluminum in the SnO2 structure. This is because aluminum has the characteristics of a metal that is a good conductor of electricity (Doyan et al, 2021). In addition, the addition of fluorine doping on SnO2 causes the bandwidth in each layer to increase (Muliyadi, et al, 2019).…”

“…The quality of a material is better used as a semiconductor material if it has a small energy band gap Doyan, et al, 2021). This is because the greater the bandgap energy value possessed by the thin layer, the more difficult it becomes for electrons to move from the valence band to the conduction band.…”