The effect of deposition rate and heat treatment on conduction and charge carrier transport mechanisms in Sb2S3 films

El-Shazly, A. A.; Seyam, M. A. M.; El-Samanoudy, M. M.; Ammar, A.H.; Assim, E.M.

doi:10.1016/s0169-4332(02)00015-6

Cited by 18 publications

(10 citation statements)

References 19 publications

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“…The lattice parameters of the orthorhombic cell unit were calculated as a = 11.236Å, b = 11.306Å, and c = 3.896Å for T S = 250 • C; a = 11.235Å, b = 11.306Å, and c = 3.847Å for T S = 260 • C; and a = 11.234Å, b = 11.306Å, and c = 3.831Å for T S = 270 • C. These parameters are in good agreement with those reported by El-Shazly et al [20] and Sun et al [21].…”

Section: Resultssupporting

confidence: 91%

Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films

Aousgi¹,

Dimassi²,

Bessaı̈s³

et al. 2015

Applied Surface Science

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Section: Resultssupporting

confidence: 91%

Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films

Aousgi¹,

Dimassi²,

Bessaı̈s³

et al. 2015

Applied Surface Science

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“…Figure 6 shows the measurements of the optical band gap for all the thin films. The band gap for Sn-Sb-S thin films is in good agreement and consistent with the literature [20][21][22]. The band gap calculated from the photoconductivity measurement by plotting the photoconductivity response with the energy (eV) is found to be 1.3 eV for all the samples; an optimal value for band gap to be used in solar cells.…”

Section: Resultssupporting

confidence: 88%

Synthesis and characterization of Sn-Sb-S thin films for solar cell applications by sputtering techniques

ALI¹,

AHMED²,

SHAARI³

et al. 2021

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Tin antimony metallic films were deposited by the sputtering technique. Sulfurization of these metallic films was carried out in thermal vacuum coating unit. Furthermore, the samples were annealed in argon atmosphere at different temperatures ranges from 425 to 525 • C for one hour inside quartz ampoules. The effects of the thermal annealing on the structural, optical and electrical properties on the sulfosalt Sn-Sb-S films have been investigated. The estimation of elemental composition was carried out with Energy Dispersive X-ray Spectroscopy. Molybdenum contacts were deposited for electrical measurement through sputtered coater by using mask arrangement. The photoconductivity measurements suggest that the obtained films show semiconducting behavior with band gap of 1.3 eV.

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“…According to Sb 2 Se 3 theoretical defect calculation, it contains 2 detrimental donor defects (V Se and Sb Se ) and 2 benign defects (Se i and Se Sb ) . Sb 2 S 3 film also contained deep trap levels in bulk and PN junction interface . Thus, temperature‐dependent conductivity measurements were further carried out to investigate the defect information of alloy film.…”

Section: Resultsmentioning

confidence: 99%

High‐throughput method to deposit continuous composition spread Sb₂(Se_xS_1 − x)₃thin film for photovoltaic application

Deng

Yuan

Yang

et al. 2018

Progress in Photovoltaics

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Sb 2 (Se x S 1 − x ) 3 alloy materials with tunable bandgaps combining the advantages of Sb 2 S 3 and Sb 2 Se 3 showed high potential in low cost, non-toxicity, and high stability solar cells. The composition dependence of device performance becomes indispensable to study. However, traditional approaches often implement 1 composition at a time, which easily lead to long period and systematic errors. The present work developed a high-throughput experimental method, close-space dual-plane-source evaporation (CDE) method, to successfully deposit continuous composition spread Sb 2 (Se x S 1 − x ) 3 library at 1 time. On the surface of the obtained film, the x value of Se content evolved from 0.09 to 0.84 by a series of complementary characterizations. At depth direction, the alloy film kept high crystallinity and composition consistency. Solar cell arrays (19 × 6) were fabricated to investigate the relationship between compositions and performances. As the increase of Se content, the conversion efficiency first increased from 1.8% to 5.6% and then decreased to 5%. The V oc and J sc demonstrated an opposite evolution trend. The champion device with the composition of Sb 2 (Se 0.68 S 0.32 ) 3 achieved the V oc and J sc trade-off exceeding the performances of Sb 2 S 3 (2.43%) and Sb 2 Se 3 (4.97%) devices. Cryogenic and transient characterizations were utilized to investigate the distinct performance evolution mechanism. There existed shallow defect levels in Se-rich alloys and deep defects in sulfur-rich ones. The widely tuned absorber compositions combined with distinct defect characters induced to the large variation of device performance. The present continuous composition spread Sb 2 (Se x S 1 − x ) 3 film and their CDE fabrication technique were expected to efficiently screen materials and promote the development of antimony chalcogenide solar cells.

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The effect of deposition rate and heat treatment on conduction and charge carrier transport mechanisms in Sb2S3 films

Cited by 18 publications

References 19 publications

Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films

Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films

Synthesis and characterization of Sn-Sb-S thin films for solar cell applications by sputtering techniques

High‐throughput method to deposit continuous composition spread Sb₂(Se_xS_1 − x)₃thin film for photovoltaic application

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The effect of deposition rate and heat treatment on conduction and charge carrier transport mechanisms in Sb2S3 films

Cited by 18 publications

References 19 publications

Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films

Effect of substrate temperature on the structural, morphological, and optical properties of Sb2S3 thin films

Synthesis and characterization of Sn-Sb-S thin films for solar cell applications by sputtering techniques

High‐throughput method to deposit continuous composition spread Sb2(SexS1 − x)3thin film for photovoltaic application

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Product

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About

High‐throughput method to deposit continuous composition spread Sb₂(Se_xS_1 − x)₃thin film for photovoltaic application