2018
DOI: 10.1016/j.tsf.2017.10.064
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The effect of deposition rate and thermal annealing on morphology and microstructural evolution of Nickel-Bismuth thin film

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Cited by 4 publications
(3 citation statements)
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“…This could be attributed to the migration of the oxygen atomic species in the coating and also a small concentration of the chromium atoms migrating into the glass support. This phenomenon was reported[24,25] when they observed that when there is a migration of atoms from the supporting layer of the coating to the top of the coating. The edge of the spectra tends to change.…”
mentioning
confidence: 78%
“…This could be attributed to the migration of the oxygen atomic species in the coating and also a small concentration of the chromium atoms migrating into the glass support. This phenomenon was reported[24,25] when they observed that when there is a migration of atoms from the supporting layer of the coating to the top of the coating. The edge of the spectra tends to change.…”
mentioning
confidence: 78%
“…The rest of the peak counts is the signature of a nonstoichiometric variation having a mixed elemental Ni, Bi, and NiBi 3 phase. In the case of Ni/Bi bilayer and multilayer systems, the diffusion happens spontaneously at the interface of Ni and Bi as a result of diffusion of Bi into the Ni matrix and the diffusion is enhanced by increasing the annealing temperature up to the melting temperature of Bi or by ion implantation. ,, In this case, Bi and Ni are codeposited to form NiBi 3 , and the observed stoichiometry variation depends on the Bi deposition rate.…”
Section: Resultsmentioning
confidence: 99%
“…This confirms that with a higher Bi deposition rate the Ni:Bi ratio varies from 1:1 (sample A) to 2:3 (sample B), indicating favorable conditions for uniform NiBi 3 phase formation during codeposition. The effect of Bi deposition rate and annealing within the melting temperature of Bi (271 °C) on a predeposited Ni film has been extensively studied by Mtshali et al They have reported the formation of Bi islands while depositing Bi at 0.6 Å/s, and the density of Bi islands increased with annealing temperature in the range of 60–200 °C. The increase in Bi deposition rate to 1.8 Å/s at a fixed annealing temperature increases the density of Bi islands, converting them to Bi nanowires.…”
Section: Resultsmentioning
confidence: 99%