Recently,
poly(vinylidene fluoride) (PVDF)-based multilayer films
have demonstrated good potential as high energy density, high temperature,
and low loss polymer dielectrics for advanced electrical and power
applications. However, impurity ion conduction in the PVDF layers
can cause significant dielectric loss at high temperatures. In this
study, we discovered a facile melt-recrystallization method to suppress
ionic conduction loss in polysulfone (PSF)/PVDF 50/50 (v/v) 33-layer
films. By use of combined differential scanning calorimetry, broadband
dielectric spectroscopy, and simultaneous small-angle X-ray scattering/wide-angle
X-ray diffraction techniques, the underlying mechanism for the suppression
of ionic conduction was unraveled. Basically, the growth and hierarchical
organization of primary and secondary PVDF crystals confined in 400
nm layers played an important role. When the cooling rate during melt-recrystallization
was high (e.g., ≥500 °C/min), small and poorly oriented
secondary crystals between orderly stacked edge-on primary crystals
allowed free transport of impurity ions in PVDF layers. At low to
moderate cooling rates (i.e., <100 °C/min), growth of flat-on
secondary crystals between the edge-on primary crystalline lamellae
blocked the transport of impurity ions, suppressing the dielectric
loss from ionic conduction. On the basis of this study, we propose
a modified multilayer coextrusion method with controlled cooling rates
to achieve flat-on secondary crystals for the reduction of high temperature
dielectric loss in PVDF-based multilayer dielectric films.