We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells. Thin lm solar cells comprising Earth-abundant, non-toxic, and air-stable materials represent a promising class of photovoltaic (PV) devices compatible with terawatts-scale deployment. 1-3 Cuprous oxide (Cu 2 O) is one of several candidate materials under consideration with the potential to reach 20% power conversion efficiency. 4,5 Doping this material to make it n-type has proven to be challenging, thus a common PV device architecture comprises a Cu 2 O-ZnO heterojunction structure. However, device efficiencies remain low, with wafer-based Cu 2 O devices (by thermal oxidation of Cu sheets at $1010 C) reaching 4.1% (ref. 6) and thin lm Cu 2 O devices (by electrochemical deposition) reaching 1.3% (ref. 7). The open-circuit voltage (V OC) of these devices is signicantly below the theoretical limit of Cu 2 O, due to a low built-in potential caused by non-ideal band alignment between the absorber and transparent conducting oxide (TCO), and a high recombination-current driven by interface-traps. 8,9 To mitigate the latter voltage-loss mechanism, we introduce a thin ($5 nm) buffer layer between the absorber and the TCO. This layer serves as an electron-blocking layer, reducing the magnitude of the recombination current at the absorber-TCO interface. This approach is reminiscent of the Si-based heterojunction with intrinsic thin layer (HIT) devices, which exhibit V OC superior to the best Si homojunction devices by creating a small energy barrier with a low density of interface-traps. 10 This energy barrier is expressed as a conduction-band offset (DE CB) of the buffer layer relative to the absorber layer; DE CB must be carefully "tuned" to avoid current losses (stemming from too high DE CB) or voltage losses (stemming from a negative DE CB). 11 This tunability can be achieved by using ternary compounds for the buffer layer, whereby the ratio of two cations (anions) typically modies the conduction (valence) band position. 12,13 Judicious composition selection of this ternary compound allows one to simultaneously limit the concentrations of carriers at the interface as well as reduce the interface-trap density, which reduces dark saturation current density (J 0) and increases V OC. To achieve maximum benet, this layer needs to