The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles

Verbitskaya, E.; Abreu, M.C.; Anbinderis, P.; Anbinderis, T.; D’Ambrosio, N.; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, Luca; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Горбатенко, В. В.; Granata, V.; Grigoriev, E.; Grohmann, Steffen; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, Robert; Härkönen, J.; Ilyashenko, I.; Jánoš, Š.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Mandić, I.; Masi, R. De; Menichelli, D.; Mikuž, M.; Militaru, O.; Niinikoski, T.; O’Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Solano, B. Perea; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Mendes, P. Rato; Ruggiero, G.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Viá, C. Da; Wobst, E.; Zavrtanik, M.

doi:10.1016/j.nima.2003.08.083

Cited by 22 publications

(8 citation statements)

References 16 publications

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“…The IV measurements in Figure 5 show all sensors to possess a dark current of around I dark = 100 nA. Sensors 42 and 43 show the beginning of a breakdown at a bias voltage of around V ≈ 280 V. The CV measurements, see Figure 6, show that the sensors fully deplete at V depletion ≈ 55 V. As a result, the breakdown shown for sensors 42 and 43 are only of minor importance for use at the DESY II Test Beam Facility, as the sensors will not be subjected to significant doses of radiation which has been shown to increase the voltage needed for full depletion of the sensors [11]. As all sensors show the expected low current and low depletion voltage, all 29 sensors were sent to IZM for bump bonding to the KPiX readout chips.…”

Section: The Telescope Sensorsmentioning

confidence: 99%

LYCORIS - A Large Area Strip Telescope

Kraemer,

Tsionou,

Stanitzki

et al. 2018

Preprint

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Section: The Telescope Sensorsmentioning

confidence: 99%

LYCORIS - A Large Area Strip Telescope

Kraemer,

Tsionou,

Stanitzki

et al. 2018

Preprint

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“…Standard technologies of the particle detectors are based on high-resistivity (HR) Si [1]. In recent years, strong interest has appeared in the heat treatment technologies to suppress the harmful radiation defects [2][3][4]. However, the intrinsic, thermally induced, and radiation defects set a wide spectrum of recombination and trapping centres.…”

Section: Samples and Irradiationsmentioning

confidence: 99%

Dynamics of carrier decay in proton and γ-ray irradiated high-resistivity Si

Gaubas¹

2006

Lithuanian J. Phys.

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Excess carrier lifetime variations in proton and γ-ray irradiated MCz Si have been examined. The linear decrease of recombination lifetime with dose in γ-ray irradiated material shows a dose-independent defect introduction rate, while protons of high fluence induce changes of the type of the dominant radiation defects. The simultaneous recombination and trapping components in the carrier decay transients were revealed by microwave absorption technique. Two peaks were separated in recombination and trapping lifetime variations with temperature. Trap activation factors were extracted. The dominant defects acting as recombination and trapping centres are discussed.

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“…For Si detector applications in current high energy physics experiments, such as those in LHC at CERN, the main effort has been directed so far towards the improvement (or reduction) of the detector full depletion voltage [1], which leads to the increase of detector sensitive volume and therefore the detector charge collection efficiency (CCE). This remains true if the level of radiation environment is in the order of 1x10 15 n eq /cm 2 ., when the trapping of free carriers by radiation-induced defects are not significant (< 50%). However, for LHC upgrade, the SLHC, the expected radiation level will be 2009 JINST 4 P03011 10 times higher, up to 1x10 16 n eq /cm 2 .…”

Section: Introductionmentioning

confidence: 98%

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC applications, where the total fluence is in the order of 1x10 15 n eq /cm 2 for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the SLHC, however, whit an increased total fluence up to 1x10 16 n eq /cm 2 , the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels. Several new approaches have been developed to make Si detector more radiation hard/tolerant to such ultra-high radiation, including 3D Si detectors, Current-Injected-Diodes (CID) detectors, and Elevated temperature annealing.

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The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles

Cited by 22 publications

References 16 publications

LYCORIS - A Large Area Strip Telescope

LYCORIS - A Large Area Strip Telescope

Dynamics of carrier decay in proton and γ-ray irradiated high-resistivity Si

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

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