The effect of channel implants on MOS transistor characterization

Parameter Extraction of MOSFETs Operated at Low Temperature

“…Another technique, introduced by Balestra and Ghibaudo [l41 is well-suited for cryogenic MOSFETs and will be discussed in the next section, since it is related to the extraction of the effective mobility. Probably the most powerful (and fairly simple) method for VT extraction is the so-called Transconductance peak [19], [20] (TC) or double-derivative method [21]. It is illustrated in Fig.…”

“…3 for three bulk n-MOSFETs at 77 K: VT is defined here as the gate voltage corresponding to the peak maximum in the a g n , / a V~s curve. From a comparison of different techniques, it can be concluded that the TC method is closest to the 'correct' physical VT, which can be determined by the so-called 'split' C-V method [19], [20]. Furthermore, it is rather insensitive to interface states, normal field mobility degradation [19], [20] and series resistance [19], [20], [22] which are highly desirable features for low-temperature extraction.…”

CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design

“…TC method, which utilizes the gate voltage at which the second derivative of the drain current versus gate voltage curve is a peak as the threshold voltage, has been proven to get a more accurate threshold voltage for various channel implant profiles, and is relatively insensitive to interface states, normal field mobility degradation and device series resistance [4].…”

Heterojunction fully depleted SOI-TFET with oxide/source overlap

“…Threshold voltage is the important parameter for any electrical switch. There are various techniques to extract the threshold voltage, among which the two most important techniques are constant current method (CC) and transconductance change (TC) method [25]. The simplest method to obtain V t is the CC method by finding the gate voltage at a constant I DS .…”

“…On the contrary, CC method has advantage that it is extracted using only one drain current data point, instead of an entire set of data points and this may be experimentally realized. It is also established that the transconductance (g m ) of a device approaches zero when it operates deep in weak as well as strong inversion, in between dg m /dV GS becomes maximum and the corresponding gate voltage is defined as the gate threshold voltage and this method is called TC method [25]. Threshold voltage extracted from this method is relatively insensitive to the interface states, normal field mobility degradation, and series resistance [25].…”