The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes

Tompkins, Randy P.; Walsh, Timothy A.; Derenge, Michael A.; Kirchner, K. W.; Zhou, Shuai; Nguyen, Cuong; Jones, Kenneth A.; Suvarna, Puneet; Tungare, Mihir; Tripathi, Neeraj

doi:10.1557/jmr.2011.360

Cited by 19 publications

(14 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In light of all these results, it is important to consider again the experimental findings of Tompkins and coworkers. 25 In Ref. 25, the authors posit the presence of an unknown forms of carbon in their GaN sample in addition to acceptor type C 1− N .…”

Section: Formmentioning

confidence: 99%

“…25 In Ref. 25, the authors posit the presence of an unknown forms of carbon in their GaN sample in addition to acceptor type C 1− N . Our results indicate that the neutral Si Ga − C N complex is a likely candidate for this unknown form of carbon in GaN.…”

Section: Formmentioning

confidence: 99%

“…However, secondary ion mass spectroscopy (SIMS) experiment reported in Ref. 25 for n-type GaN indicated that carbon concentration is always higher than the carrier concentration. This result implies that not all of the carbon takes the form of C 1− N and that substantial amount of other forms of carbon would exist in n-type GaN.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

Matsubara

Bellotti

2017

Journal of Applied Physics

View full text Add to dashboard Cite

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped GaN. This manuscript is a complement to our previous work on carbon-carbon and carbon-vacancy complexes. We have employed a first-principles method using Heyd-Scuseria-Ernzerhof hybrid functionals within the framework of generalized Kohn-Sham density functional theory. Two H-C, four Si-C and five O-C complexes in different charge states have been considered. After full geometry relaxations, formation energies, binding energies and both thermal and optical transition levels were obtained. The calculated energy levels have been systematically compared with the experimentally observed carbon related trap levels. Furthermore, we computed vibrational frequencies for selected defect complexes and defect concentrations were estimated in the low, mid and high carbon doping scenarios considering two different cases where electrically active defects: (a) only carbon and vacancies and (b) not only carbon and vacancies but also hydrogen, silicon and oxygen. We confirmed that CN is a dominant acceptor in GaN. In addition to it, substantial amount of SiGa − CN complex exists in a neutral form. This complex is a likely candidate for unknown form of carbon observed in undoped n-type GaN.PACS numbers: 61.72. 61.72.uj, 71.15.Mb, 71.55.Eq

show abstract

Section: Formmentioning

confidence: 99%

Section: Formmentioning

confidence: 99%

See 1 more Smart Citation

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

Matsubara

Bellotti

2017

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Some of the C could also have been compensated by H. Some have suggested that C preferentially precipitates out at dislocations, and that higher quality material contains less C (22), but this is the opposite to what we found in that the material with the largest dislocation concentration had the least amount of C. This could be due to the fact that we grew our films at 500 Torr., which is higher than the pressure usually used because the growth rate is slower. Less C is incorporated in MOCVD grown films when they are grown at higher pressures (23,24). We found that the MOCVD UID films grown in four separate labs at 100 Torr.…”

Section: Experimental Procedures and Resultsmentioning

confidence: 80%

Achieving Low Doped (<10¹⁶) GaN with Large Breakdown Voltages (~1000 V)

et al. 2013

Self Cite

View full text Add to dashboard Cite

Point defects in the GaN cause premature breakdown in GaN Schottky diodes at least to the same extent as dislocations do. The most likely cause is impact ionization of deep acceptors. A primary deep acceptor in MOCVD-grown GaN is C. Another is a Ga vacancy, which is likely to be the primary deep acceptor in HVPE-grown material. Lower net carrier concentrations, and therefore larger breakdown voltages, can be achieved in the HVPE material.

show abstract

“…Several studies of MOCVD GaN homoepitaxy have shown low carbon concentrations at mid‐ to low‐10 15 cm −3 according to secondary ion mass spectroscopy (SIMS). [ 24–27 ] Despite tremendous efforts on suppressing C incorporation by tuning growth conditions, such as V/III ratio, growth temperature, and growth pressure, [ 22,24,28–30 ] lowering C concentration while maintaining a fast growth rate remains challenging.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang

Chen

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h−1 is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH4 flow, an electron concentration as low as 4 × 1015 cm−3 in n−‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h−1. Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 1016 cm−3. GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm2 V−1 s−1 as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

show abstract

The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes

Abstract: Abstract

Cited by 19 publications

References 16 publications

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

Achieving Low Doped (<10¹⁶) GaN with Large Breakdown Voltages (~1000 V)

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Contact Info

Product

Resources

About

The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes

Abstract: Abstract

Cited by 19 publications

References 16 publications

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

Achieving Low Doped (<1016) GaN with Large Breakdown Voltages (~1000 V)

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Contact Info

Product

Resources

About

Achieving Low Doped (<10¹⁶) GaN with Large Breakdown Voltages (~1000 V)