1997
DOI: 10.1109/16.644655
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The effect of body contact series resistance on SOI CMOS amplifier stages

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Cited by 21 publications
(9 citation statements)
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“…2-4, a conclusion could be drawn that the LBBC structure has the best capability to suppress floating-body effects, BTS the second, and HG the third. This could be explained using the body contact resistance theory [8]: the capability to suppress floating-body effects is inversely proportional to the body contact resistance R BC , i.e. the resistance from channel to body contact electrode, which was largely determined by p + diffusion resistance of body contact.…”
Section: Resultsmentioning
confidence: 99%
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“…2-4, a conclusion could be drawn that the LBBC structure has the best capability to suppress floating-body effects, BTS the second, and HG the third. This could be explained using the body contact resistance theory [8]: the capability to suppress floating-body effects is inversely proportional to the body contact resistance R BC , i.e. the resistance from channel to body contact electrode, which was largely determined by p + diffusion resistance of body contact.…”
Section: Resultsmentioning
confidence: 99%
“…the resistance from channel to body contact electrode, which was largely determined by p + diffusion resistance of body contact. For the BTS or HG structure, R BC could be expressed as formula (1) from first approximation [8], while that of LBBC, R 0 BC , could be modified as formula (2) accordingly:…”
Section: Resultsmentioning
confidence: 99%
“…Note that although a body tie connection from the body region to a convenient reference node (usually the source) will, in principle, eliminate all anomalous behavior related to the body node, in reality there is always some series resistance. This resistance is technology, layout and indeed bias dependent, and major departures from expected characteristics can arise from its presence [8]. The present model version does not include this series resistance, since at the time of writing, no convenient description suitable for compact modeling has been proposed.…”
Section: B Extrinsic Parasitics and Floating-body Effectsmentioning
confidence: 99%
“…Also, if no velocity saturation effect were to be included, then the drain saturation potential would be attained when the channel charge density vanishes. Using these criteria and the linearized channel charge expression in (8), the upper bound of the saturation potential is found to be . Therefore, the saturation potential including high field mobility effects may be defined as [17] ( 21) where is a quantity dependent on mobility parameters.…”
Section: F Saturation Modelmentioning
confidence: 99%
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