2018
DOI: 10.1134/s1063785018100139
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The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells

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Cited by 26 publications
(7 citation statements)
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“…According to photocell CVC, the average values of photocell parameters and their relative changes were determined: V ocno-load voltage; (V oc −V oc1 )/V oc1 -relative change in no-load voltage (relative to the average value for the samples of group 1a); J s cshort circuit current density;(J s c −J s c1 )/J s c1the change in short circuit current density (relative to the average value for the samples of group 1a); P peakspecific peak power (calculated as the product of J s c and V oc ); (P peak −P peak1 )/P peak1 -relative change in specific peak power (relative to the average value for the samples of group 1a). Photocell parameters were rather low due high base volume resistivity [14] and large sample thicknesses [15,16].…”
Section: Resultsmentioning
confidence: 99%
“…According to photocell CVC, the average values of photocell parameters and their relative changes were determined: V ocno-load voltage; (V oc −V oc1 )/V oc1 -relative change in no-load voltage (relative to the average value for the samples of group 1a); J s cshort circuit current density;(J s c −J s c1 )/J s c1the change in short circuit current density (relative to the average value for the samples of group 1a); P peakspecific peak power (calculated as the product of J s c and V oc ); (P peak −P peak1 )/P peak1 -relative change in specific peak power (relative to the average value for the samples of group 1a). Photocell parameters were rather low due high base volume resistivity [14] and large sample thicknesses [15,16].…”
Section: Resultsmentioning
confidence: 99%
“…This is related to the nonperpendicular light incidence on the textured elements of the structure, which leads to an increase in the photon path length due to the multiple total internal reflection and to an increase in the absorption in the long-wavelength region. It was established in [30,31] that the absorption edge in silicon HIT SCs and FAPbI 3 -based SCs can be described by the generalized expression which differs from (8) by the presence of the parameter : where ≥ 1 is a dimensionless parameter equal to the ratio of the longest possible photon path length, 4 2 at the ideal Lambertian light trapping to its real value. This ratio depends on the texturing quality (degree of light capture) and the film thickness.…”
Section: Resultsmentioning
confidence: 99%
“…We note that the case when the expression (4) with b=1 is realized experimentally is rare. In particular, it was demonstrated in [24] that the experimental results for the textured silicon-based SCs and textured HIT elements near the absorption edge can be described theoretically with a transformed expression of the form (6) with b > 1.…”
Section: Resultsmentioning
confidence: 99%
“…Using obtained data of climate regime in the investigated region, we modeled the operating conditions for the RES systems. The data was obtained from the National Aeronautics and Space Administration (NASA) Langley Research Center (LaRC) Prediction of Worldwide Energy Resource (POWER) Project funded through the NASA Earth Science/Applied Science Program [15][16][17][18][19][20][21][22][23]. Two regions with similar climatic regime in the area of Gulf Of Finland were investigated.…”
Section: Methodsmentioning
confidence: 99%