The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga₂O₃ Nano-HEMT

Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications

“…But, excessive scaling of the upper barrier in such devices results in a severe rise in gate leakage current and a substantial drop in 2DEG concentration. Hence, adopting a back-barrier structure offers a unique approach to preventing the consequences of short channels without scaling the upper barrier layer [18], [19]. Although AlGaN/GaN based HEMTs grown on GaN substrate exhibit signi cant input, output and excellent breakdown capabilities, but their development is impeded by the pricy GaN wafer fabrication method.…”