The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te

Schmit, J. L.; Stelzer, E. L.

doi:10.1007/bf02656021

Cited by 64 publications

(16 citation statements)

References 5 publications

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“…It is observed that the concentration of electronic carriers in these materials for a given Hg to Cd ratio can be varied by equilibration at temperatures above 200~ under various mercury pressures (6)(7)(8)(9)(10). In accordance with the simple defect chemistry of solids, it is inferred that this implies a varying concentration of native atomic point defects, which can act as donors or acceptors, and consequently a small range of stability around an atomic fraction of one-half for Te.…”

mentioning

confidence: 85%

Partial Pressures over HgTe ‐ CdTe Solid Solutions: I . Calibration Experiments and Results for

Schwartz

Tung

Brebrick

1981

J. Electrochem. Soc.

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Calibration experiments are reported that enable the partial pressures of Hg, Te2 , and Cd to be calculated from measurements of the optical absorbance between 220 and 700 nm of the vapor phase. In particular, the self‐broadening and Hg‐broadening coefficients of the 228.7 and 325.7 Cd lines are established. The pressure ranges are between 10−2 and 32 atm for Hg, 10−4 and 10−2 atm for Te2 , and 10−7 and 10−5 atm for Cd. These calibrations are used in a study of the normalHgTe‐normalCdTe solid solution containing 41.6 normalMole Percent CdTe to determine all three partial pressures along the three‐phase curve, the chemical potentials of normalHgTe and normalCdTe components, and the Gibbs free enthalpy of formation. Density and lattice parameter as a function of normalCdTe content are also reported.

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mentioning

confidence: 85%

Partial Pressures over HgTe ‐ CdTe Solid Solutions: I . Calibration Experiments and Results for

Schwartz

Tung

Brebrick

1981

J. Electrochem. Soc.

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“…Extensive work has been reported on material with x = 0.2, 1-3 and x = 0.4 4,5 it can be said that this material is fairly well understood. It has long been recognized that these anneals result in vacancies in the material whose concentration is reflective of the anneal and its ambient.…”

Section: Introductionmentioning

confidence: 99%

Vacancies in Hg1−xCdxTe

Chandra¹,

Schaake²,

Tregilgas

et al. 2000

Journal of Elec Materi

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“…This technique, in conjunction with electrical measurements, may yield a better understanding of point defects and vacancies, in particular for Hg~_~Cd~Te. The results of this work may also contribute to a further elucidation of the p-type to n-type conversion on which considerable disagreement still prevails (12)(13)(14)(15)(16)(17).…”

mentioning

confidence: 91%

The Heat of Formation of Mercury Vacancies in Hg0.8Cd0.2Te

Wiedemeier

Trivedi²,

Whiteside³

et al. 1986

J. Electrochem. Soc.

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A modified mass loss measurement technique has been employed, for the first time, for the direct in situ determination of vacancy concentrations in Hg0.~Cdo.2Te at elevated temperatures. This technique can also be used to establish the pressure-temperature phase diagram for this type of systems. The derived mean value for the heat of formation of mercury vacancies in the above alloy is 0.43 eV. Theoretical considerations concerning the vacancy formation in HgTe and in Hg0.sCd0.2Te are in qualitative agreement with our experimental value.

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The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te

Cited by 64 publications

References 5 publications

Partial Pressures over HgTe ‐ CdTe Solid Solutions: I . Calibration Experiments and Results for

Partial Pressures over HgTe ‐ CdTe Solid Solutions: I . Calibration Experiments and Results for

Vacancies in Hg1−xCdxTe

The Heat of Formation of Mercury Vacancies in Hg0.8Cd0.2Te

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