The effect of annealing on structural, electrical and optical properties of nanostructured ITO films prepared by e-beam evaporation

Fallah, Hossein; Varnamkhasti, Mohsen Ghasemi; Hassanzadeh, Akbar; Steki, Hadi

doi:10.1016/j.materresbull.2006.06.024

Cited by 148 publications

(72 citation statements)

References 21 publications

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“…It can be seen that the deposited film at O.P.P. of 1 Â 10 À4 mbar showed a minimum resistivity of 3:2 Â 10 À4 X cm which was much lower than the value reported in our previous work [5]. As the O.P.P.…”

Section: Electrical Propertiescontrasting

confidence: 60%

“…Clearly, the presence of oxygen beyond a certain limit has little effect in controlling the optical properties of these films. The ripples in optical transmittance spectra can be attributed to the optical interference effects [5]. The refractive index of the deposited ITO films was evaluated from the measured optical transmittance spectra using envelop method [26].…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Sn doped In 2 O 3 (ITO) is very attractive n-type degenerate semiconductor material with wide band gap because of its unique characteristics such as high chemical and thermal stability, good electrical conductivity, high optical transmittance over the visible wavelength region and excellent adhesion to various substrates [5]. This material has been widely used in many optoelectronic applications such as gas sensors [6], flat panel displays (FPD) [7], solar cells [8], photodiodes [9], light emitting diodes [10], etc.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline $${\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}$$ In 2 O 3 :Sn thin films

Varnamkhasti

Soleimanian

2015

J Mater Sci: Mater Electron

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In this study Sn doped In 2 O 3 (ITO) thin films were deposited on glass substrates by e-beam evaporation technique at different oxygen partial pressure and then were annealed in vacuum at 400 C for 1 h. The effects of oxygen partial pressure on the crystallite size, dislocation density, outer cut-off radius of dislocation, fraction of edge and screw dislocation types, the electrical resistivity, optical transmittance, refractive index, porosity and optical band gap energy were studied. The films deposited at an optimized oxygen partial pressure of 1 Â 10 À4 mbar showed high transparency (88 %) over the visible wavelength region, low electrical resistivity of 3:2 Â 10 À4 X cm and the optical band gap of 3.63(3) eV. It is also observed that the best crystal quality (high crystallite size and low dislocation density) are obtained in partial pressure of 1 Â 10 À4 mbar, indicating the oxygen partial pressure is a key factor in controlling the microstructure, electrical and optical properties of ITO films.

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Section: Electrical Propertiescontrasting

confidence: 60%

Section: Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline $${\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}$$ In 2 O 3 :Sn thin films

Varnamkhasti

Soleimanian

2015

J Mater Sci: Mater Electron

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“…It is clear that the minimum value of sheet resistance was obtained for the deposited film at OPP of 1 Â 10 À4 mbar, which was much lower than the value reported in our previous work. 18 In general, the sheet resistance of the transparent conductive oxide (TCO) films can be decreased by adding suitable dopants to the material and/or by increasing oxygen vacancies. The electrons in ITO films are created by the ionization of both oxygen vacancies and substitution of tin instead of indium sites.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In $$_2$$ 2 O $$_3$$ 3 Nanostructures

Soleimanian

Varnamkhasti

2016

Journal of Elec Materi

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In this research, high-quality Sn doped indium oxide (ITO) thin films were grown on glass slide substrates using an electron beam evaporation method. Vacuum chamber partial pressure was changed and the electro-optical as well as the microstructure parameters were investigated. The microstructure of prepared films was evaluated by x-ray diffraction analysis in terms of crystallite size and dislocation density. It was found that the best results [high transparency (88%) over the visible wavelength region, low sheet resistance of 12.8 X/square, the optical band gap of 3.76 eV, crystallite size of 49.5 nm and dislocation density of 1:42 Â 10 14 m À2 ] were achieved for the sample produced at a partial pressure of 1 Â 10 À4 mbar. Therefore, one can successfully control the physical properties of ITO films by varying the oxygen content of the evaporation system. The correlation between the band gap and carrier concentration in addition to the average crystallite size of films was also established.

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“…A well-known material to serve the purpose is represented by the nanoparticles such as tin-doped indium oxide (ITO) [7][8][9][10] and lanthanum hexaboride (LaB 6 ) [11][12][13]. They are known for providing highly transparent solar filters to absorb infrared rays.…”

Section: Introductionmentioning

confidence: 99%

Synergetic effect of LaB6 and ITO nanoparticles on optical properties and thermal stability of poly(vinylbutyral) nanocomposite films

Tang

et al. 2014

Appl. Phys. A

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In this work, different compositions of lanthanum hexaboride (LaB 6 ) and tin-doped indium oxide (ITO) nanoparticles were doped into poly(vinylbutyral) (PVB) matrix to prepare PVB/LaB 6 -ITO nanocomposite (PLINC) films by a solution casting method. X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, thermogravimetric analysis (TGA) and ultraviolet-visible-near infrared spectroscopy (UV-vis-NIR) were employed to characterize the PLINCs. The TGA and UV-vis-NIR results reveal that the nanocomposite films possessed outstanding thermal stability. The temperature where 5 % weight loss of the PVB matrix was improved after the addition of LaB 6 and ITO particles and the property for blocking near infrared light was also enhanced as compared with the case of pure PVB film.

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The effect of annealing on structural, electrical and optical properties of nanostructured ITO films prepared by e-beam evaporation

Cited by 148 publications

References 21 publications

Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline $${\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}$$ In 2 O 3 :Sn thin films

Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline $${\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}$$ In 2 O 3 :Sn thin films

Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In $$_2$$ 2 O $$_3$$ 3 Nanostructures

Synergetic effect of LaB6 and ITO nanoparticles on optical properties and thermal stability of poly(vinylbutyral) nanocomposite films

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