2015
DOI: 10.1007/s11244-015-0479-5
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The Effect of Al Buffer Layer on the Catalytic Synthesis of Carbon Nanotube Forests

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Cited by 9 publications
(12 citation statements)
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“…In electrical applications of on-device CNT forests, it is essential to ensure a seamless interface between the nanotubes and the metallic current collector layer of the device. In our previous study, we confirmed that carbon nanotubes can be grown on a number of different metal foils and slabs when using aluminum buffer layer without significantly increase in the series resistance of the metal-CNT interface in supercapacitor applications 44 . In our current effort, we implement our well-tested growth technology to synthesize interdigitated micro patterns of aligned CNT forests directly on a silicon chip.…”
Section: Introductionsupporting
confidence: 56%
“…In electrical applications of on-device CNT forests, it is essential to ensure a seamless interface between the nanotubes and the metallic current collector layer of the device. In our previous study, we confirmed that carbon nanotubes can be grown on a number of different metal foils and slabs when using aluminum buffer layer without significantly increase in the series resistance of the metal-CNT interface in supercapacitor applications 44 . In our current effort, we implement our well-tested growth technology to synthesize interdigitated micro patterns of aligned CNT forests directly on a silicon chip.…”
Section: Introductionsupporting
confidence: 56%
“…As shown by the XPS spectra in Figure c, d, the 2p 1/2 (793.3 eV) and 2p 3/2 (777.8 eV) XPS peaks of the metallic Co phase emerge after annealing for the sa-Al substrate, while the Co phase for the nontreated sample is completely oxide. Moreover, the nanostructured Al with large surface area and high wettability enables trapping of catalyst atoms and uniform dispersion of catalyst particles, , and enhances hydrogen adsorption and spillover onto catalysts, , both of which contribute to the enhanced catalytic activity at lower CVD temperatures.…”
Section: Resultsmentioning
confidence: 99%
“…As shown by the XPS spectra in Figure 3c, d nontreated sample is completely oxide. Moreover, the nanostructured Al with large surface area and high wettability enables trapping of catalyst atoms and uniform dispersion of catalyst particles, 36,37 and enhances hydrogen adsorption and spillover onto catalysts, 38,39 both of which contribute to the enhanced catalytic activity at lower CVD temperatures. The exemplary TEM image in Figure 3e shows that the average diameter of the catalyst nanoparticle is ca.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Lately, the growth of VACNT have been reported on different conducting DBL materials, such as aluminium [4,23,25,46,51,56,[63][64][65][66][67][68][69][70][71][72][73], molybdenum aluminide [34,74], tantalum [62,75,76], tantalum nitride [77,78], titanium [79,80], titanium aluminide [47], titanium nitride [60,[81][82][83][84][85][86][87][88], metal silicide nitride [89][90][91], their stacking use, graphitic layer [92] and many others. Nowadays, researchers are using physical vapor deposition (PVD), atomic layer deposition (ALD) [86,93,94], or CVD techniques for the deposition of various conducting DBL.…”
Section: Dbl Towards Enhanced Growth Of Vacnt On Diverse Flat and 3-d...mentioning
confidence: 99%
“…Therefore, long VACNT are easily achievable on insulating DBLs, yet, the same needs to be developed for conducting ones. Research teams have deeply investigated the use of Al DBL, with different postdeposition treatments, for the growth of VACNT [46,51,[64][65][66][68][69][70][71][72].…”
Section: Via Physical Vapour Deposition (Pvd)mentioning
confidence: 99%