The effect of additives on the adsorption properties of porous silicon

O'Halloran, G.M.; Kuhl, Michael; Trimp, P.J.; French, P.J.

doi:10.1016/s0924-4247(97)80298-1

Cited by 52 publications

(24 citation statements)

References 25 publications

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“…Previously the interaction of both oxidized and nonoxidized porSi layers with ionic surfactants was studied. [6][7][8][9][10][11][12] An addition of surfactants to the electrochemical etch bath during the preparation of porSi has been found to modify the etch morphology and photoluminescence properties of the material.…”

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confidence: 99%

Surfactant‐Modified Hydrophilic Nanostructured Porous Silicon for the Photosensitized Formation of Singlet Oxygen in Water

et al. 2007

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Porous silicon (porSi), which contains luminescent Si nanocrystal assemblies, is a promising semiconductor material for the photosensitized formation of singlet oxygen, 1 O 2 , for biological applications. However, because as-prepared luminescent Si nanocrystals are H-terminated and therefore hydrophobic, the first step to create a prototype of Si nanocrystalbased photosensitizer should be a modification of the Si nanocrystal surface with the aim to make it hydrophilic and able to work in a biological ambient. Such surface modification by surfactants should not, however, result in a decrease of the nanocrystals' durability that may, in principle, take place because of surfactant-induced weakening of surface tension and the consequent increase of interaction with H 2 O molecules. Surfactants should not also decrease the ability of the nanocrystals to transfer the excitation energy to acceptors (first of all molecular oxygen) on their surface. These rather contradictory tasks have been largely solved in the present work by use of nonionic surfactants physically adsorbed on the porSi surface.One of the strategic objectives of nanotechnology is the development of new materials of nanometer size that have entirely new physical properties, and, therefore, new functionality. Over the last decade, tailoring of material characteristics by size control has been demonstrated for many types of semiconductors. Optical and electronic properties of semiconductor nanocrystals can be simply engineered by changing their size and composition. When electrons and holes are squeezed into a dimension that approaches a critical size, quantum-confinement effects become apparent. This effect can be seen experimentally as a widening of the semiconductor nanocrystal bandgap.[1]

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Surfactant‐Modified Hydrophilic Nanostructured Porous Silicon for the Photosensitized Formation of Singlet Oxygen in Water

et al. 2007

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“…PL spectra corresponding to samples prepared in each solution with the same anodization conditions, current density (56.5 mA cm -2 ), anodization time (10 min) and resistivity [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] cm, are shown in Figure 3. PL spectrum for sample produced from HF-MeCN solution presented a blue shift peak that may depend on the pore depth and diameter.…”

Section: Resultsmentioning

confidence: 99%

“…The surface tension reduction promotes two effects of reducing the size of the hydrogen bubbles, and of allowing the formed bubbles to escape more easily from the solution, favoring the PS layer formation. 5,[14][15][16] Considering all these aspects, the goal of this work is to present the study and discuss the anodization parameter influences on the formed PS macroporous layer. Comparing the colossal publication found in the literature on PS subjects, few reports are dedicated to PS formation from MeCN additive.…”

Section: Introductionmentioning

confidence: 99%

Morphological and optical characteristics of porous silicon produced by anodization process in HF-acetonitrile and HF-ethanol solutions

Miranda¹,

Baldan²,

Beloto³

et al. 2008

J. Braz. Chem. Soc.

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Amostras de silício poroso (PS) foram obtidas pelo processo de anodização em lâminas de Si tipo n, dopadas com fósforo. A oxidação eletroquímica do PS foi obtida utilizando-se solução de ácido fluorídrico (HF) contendo aditivos como etanol e acetonitrila (MeCN). A formação dos poros foi estudada com a variação da resistividade das laminas de Si e parâmetros de processo como: concentração do ácido, densidade de corrente e tempo de anodização. As técnicas de Microscopia Eletrônica de Varredura (MEV) e Espectroscopia de Espalhamento Raman foram utilizadas para a investigação da morfologia e fotoluminescência, respectivamente. A camada de PS formada com o uso da solução de HF-MeCN mostrou maior uniformidade e homogeneidade na distribuição dos macroporos com diferentes tipos e tamanhos. Esse comportamento pode ser explicado devido a tensão superficial da MeCN ser maior que a do etanol. Consequentemente, as moléculas de MeCN podem passivar a superfície do silício durante o processo de anodização.Porous silicon (PS) samples were obtained by anodization etching process of n-type silicon wafer phosphorus-doped. Electrochemical oxidation of PS was investigated in aqueous hydrofluoric acid (HF) containing additive such as ethanol or acetonitrile. Pore formation was studied with the variation of type and resistivity of the silicon wafer, taking into account the most important anodization process parameters such as: acid concentration, current density and anodization time. Scanning Electron Microscopy (SEM) and Raman Scattering Spectroscopy measurements were used to characterize the macropore morphology changes and sample photoluminescense responses, respectively. PS layer formed in HF-acetonitrile solution showed more uniform and homogeneous macropore distributions with different shapes and sizes. Behavior may be explained because acetonitrile surface tension is greater than that of ethanol. Therefore, acetonitrile molecules might passivate the silicon surface dissolved during the anodization process. Keywords: porous silicon, HF-acetonitrile, HF-ethanol IntroductionSince the discovery of its visible photoluminescence (PL) at room temperature, porous silicon (PS) has been intensively studied. Nowadays, PS is considered a very attractive material for the sensing layer in a chemical sensor, sacrificial layer in micromachining, and light emitting diode (LED) in optoelectronic devices. [1][2][3][4] Porous Si might be formed by electrochemical etching of single monocrystalline Si in HF solutions containing additives as ethanol or acetonitrile (MeCN). However, the anodization process was firstly studied by Bomchil et al., 5 in 1983, using HF and ethanol solution and they reported that ethanol improved the homogeneity of PS layer. Consequently, HF-ethanol has been used by most research groups as the standard electrolyte for PS formation process. After that, Propst et al. 6 have reported the electrochemical oxidation of p-and n-type silicon in nonaqueous electrolyte of HF-MeCN and discussed their singular and large porous structure...

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“…Indeed, hydrogen is produced during the etching process, and the coalescence of bubbles can lead to morphology inhomogeneity. 9,10 In this review, the description of PS etching will be restricted to aqueous HF electrolytes. For etching processes in organic solutions, one can see Ref.…”

Section: General Description and Etching Principlesmentioning

confidence: 99%