The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Abstract

The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs ) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS ). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.

Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistors

“…Thus, research is required on processes that can significantly improve TFT electrical characteristics and reduce their environmental footprint. [24,25] In this regard, published research results have shown how device characteristics are improved by applying heat treatment to the surface after the deposition of a-IGZO as an active layer. [26][27][28][29][30] However, active layer materials exhibit different degradation processes in real environments, and identifying the degradation mechanisms in different environments might be unattainable.…”