The effect of A-site sublattice order on the electrical properties of Na0.5Bi0.5TiO3 compound

Wang, Wei Guo; Li, Min Yan; Wang, Xin Fu; Wang, Dan; Hao, Gang

doi:10.1007/s10854-019-01887-9

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…Oxygen ion conductors have been quite broadly used, such as oxygen pumps, oxygen separation membranes and solid oxide fuel cells (SOFC), etc. [1][2][3][4][5][6]. In the past several decades, there are multitudinous research groups devoting to study oxygen ion  Corresponding author, Tel: +86-911-2650504; Fax: +86-911-2650504, E-mail: wwgissp@126.com conductors [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Ga doping for non-stoichiometric sodium bismuth titanate ceramics

wang

et al. 2021

J Mater Sci: Mater Electron

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The electrical performance of Ga 3+ doping Na0.5Bi0.5TiO3-based oxygen ion conductor was studied. The Na0.52Bi0.47Ti1-xGaxO3-δ (x=0, 0.01, 0.015, 0.02) samples were fabricated by the means of traditional solid-state reaction. The results of AC impedance measurement show that the bulk conductivity of Na0.52Bi0.47Ti1-xGaxO3-δ samples decrease monotonously with the increase of Ga 3+ doping. At 673 K, the bulk conductivity of the Na0.52Bi0.47Ti0.98Ga0.02O3-δ sample is 7.19×10 -4 S/cm, which is lower than that of Na0.52Bi0.47TiO3-δ sample under the identical test temperature. The highest total conductivity emerges in the Na0.52Bi0.47Ti0.99Ga0.01O3-δ sample with 1.387×10 -4 S/cm at 623 K for the Ga 3+ doping content of 1 mol%, which demonstrate that a slight of Ga 3+ doping supports the enhancement of the total conductivity. A relaxation peak was observed in the Na0.52Bi0.47Ti1-xGaxO3-δ compounds. As the Ga 3+ ions were introduced into the Na0.52Bi0.47TiO3-δ compound, there is an increasing trend of the relaxation activation energy educed by the internal friction test. In addition, the oxygen relaxtion height of Na0.52Bi0.47Ti1-xGaxO3-δ samples decreases along with the introduction of the Ga 3+ doping, suggesting that the introduction of the Ga 3+ leads to the decrease of mobile oxygen vacancy .

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Section: Introductionmentioning

confidence: 99%

Investigation of Ga doping for non-stoichiometric sodium bismuth titanate ceramics

wang

et al. 2021

J Mater Sci: Mater Electron

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Effect of the sintering temperature on electrical properties of the Na0.54Bi0.46TiO2.96 compound

et al. 2022

Ceramics International

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High-throughput screening of oxygen ion conductors with Ba X O and Sr Y O compositions: Crystallochemical and DFT-calculations

Kabanova,

Galstyan,

Frolov

2024

Solid State Ionics

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The effect of A-site sublattice order on the electrical properties of Na0.5Bi0.5TiO3 compound

Cited by 3 publications

References 21 publications

Investigation of Ga doping for non-stoichiometric sodium bismuth titanate ceramics

Investigation of Ga doping for non-stoichiometric sodium bismuth titanate ceramics

Effect of the sintering temperature on electrical properties of the Na0.54Bi0.46TiO2.96 compound

High-throughput screening of oxygen ion conductors with Ba X O and Sr Y O compositions: Crystallochemical and DFT-calculations

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