The E′ center and oxygen vacancies in SiO2

Pantelides, Sokrates T.; Lu, Zhong-Yi; Nicklaw, Christopher; Bakos, Tamas; Rashkeev, Sergey N.; Fleetwood, D. M.; Schrimpf, R.D.

doi:10.1016/j.jnoncrysol.2007.08.080

Cited by 56 publications

(30 citation statements)

References 25 publications

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“…To characterize these defects in silica, high concentrations have been generated with gamma rays or high energy neutrons. 45,70 These defects also are found in thermal silica grown on α-quartz. 1 Higher concentrations of these defects are found in plasma-enhanced chemical-vapor-deposited silica.…”

Section: -7mentioning

confidence: 76%

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Magnetic stability of oxygen defects on the SiO2 surface

et al. 2017

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The magnetic stability of E′ centers and the peroxy radical on the surface of α-quartz is investigated with first-principles calculations to understand their role in magnetic flux noise in superconducting qubits (SQs) and superconducting quantum interference devices (SQUIDs) fabricated on amorphous silica substrates. Paramagnetic E′ centers are common in both stoichiometric and oxygen deficient silica and quartz, and we calculate that they are more common on the surface than the bulk. However, we find the surface defects are magnetically stable in their paramagnetic ground state and thus will not contribute to 1/f noise through fluctuation at millikelvin temperatures.

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Section: -7mentioning

confidence: 76%

“…1), which are the most common charged ODC-related paramagnetic defects in silica, 44,45 and also the peroxy radical, which is important for oxygen-rich conditions. We find that these defects are magnetically stable with magnetic moments of 1µ B .…”

Section: Introductionmentioning

confidence: 99%

Magnetic stability of oxygen defects on the SiO2 surface

et al. 2017

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“…It was seen that there was a wide emission peak at 419nm under the excitation light of 350 nm, which located in the blue wavelengths of visible light. Several kinds of surface defects, such as nonbridging oxygen hole centers, ≡Si-O• in silica matrix, oxygen-deficient center and self-trapped excitons [16,17] are responsible for this luminescence band. Uchino and co-workers have proposed a defect pair model that co-condensed by dioxasilirane(＝Si(O 2 )) and silylene(＝Si:)) and a density functional theory.…”

Section: Fig4 Emission Spectra Of Silica Submicron Rodsmentioning

confidence: 99%

Facile Synthesis and Luminescence Properties of Silica Submicron Rods

Chen¹,

Ye²,

Ju³

et al. 2014

Proceedings of the 2015 International Conference on Material Science and Applications

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Abstract. Silica submicron rods were conveniently synthesized through a simple sol-gel method at room temperature. The SEM images demonstrated that the obtained silica submicron rods had high purity and uniform diameter of about 380-400 nm. The XRD results showed the obtained silica submicron rods were amorphous. Furthermore, the silica submicron rods exhibited blue emission under UV light excitation, which is relevant to the surface-associated defects.

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“…It is a shallow hole trap. Prevailing theories are that it is either single oxygen vacancy that remains in the dimer state in both the charged and neutral states [27] or a cluster of four vacancies of E γ -like dangling bonds [28][29][30][31][32][33].…”

Section: Carrier Trappingmentioning

confidence: 99%

“…This configuration is found to exist in densities of ≈80% while the bistable defect (E γ center) with activation energy of 4.5 eV at a concentration of ≈20%. Further studies have shown that immediately after irradiation, the predominant trapping site is the shallow E δ , and gradually, as the shallow traps get annealed with time, charges get trapped in deep hole trapping sites [32,42].…”

Section: Trapping Model Parametrizationmentioning

confidence: 99%

A systematic method for simulating total ionizing dose effects using the finite elements method

2017

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Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO 2 capacitors irradiated at total doses of 11.6 kRad (SiO 2 ) and 58 kRad (SiO 2 ). Driftdiffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.

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The E′ center and oxygen vacancies in SiO2

Cited by 56 publications

References 25 publications

Magnetic stability of oxygen defects on the SiO2 surface

Magnetic stability of oxygen defects on the SiO2 surface

Facile Synthesis and Luminescence Properties of Silica Submicron Rods

A systematic method for simulating total ionizing dose effects using the finite elements method

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