The dynamics of reactive ion sputtering of SnSb and InSn alloys in an ArO2 atmosphere

Leja, E.; Kołodziej, A.; Pisarkiewicz, T.; Stapiński, Tomasz

doi:10.1016/0040-6090(81)90699-4

Cited by 25 publications

(4 citation statements)

References 4 publications

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“…At a given rf power, the thermalizatoin region shifts toward the target by increasing O 2 partial pressure. 22 This result leads to the oxidation of the target 23,24 and possible resputtering of the film 25 and created the decreased deposition rate of the BS x T 1−x thin films.…”

Section: Crystal Structure and Chemical Composition Of The Bs X T 1−xmentioning

confidence: 98%

Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering

Huang

Wang

Chen

et al. 2006

Journal of the European Ceramic Society

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Section: Crystal Structure and Chemical Composition Of The Bs X T 1−xmentioning

confidence: 98%

Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering

Huang

Wang

Chen

et al. 2006

Journal of the European Ceramic Society

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“…37 It should be noted that at higher carrier electron-electron and electron-impurity scattering result in a downward shift of the conduction band and upward shift of the valence band and consequently band gap narrowing. Therefore, considering both band gap widening and narrowing effect, the effective band gap can be expressed by 36 :…”

Section: Evaluation Of Band Gap Energymentioning

confidence: 99%

Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In $$_2$$ 2 O $$_3$$ 3 Nanostructures

Soleimanian

Varnamkhasti

2016

Journal of Elec Materi

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In this research, high-quality Sn doped indium oxide (ITO) thin films were grown on glass slide substrates using an electron beam evaporation method. Vacuum chamber partial pressure was changed and the electro-optical as well as the microstructure parameters were investigated. The microstructure of prepared films was evaluated by x-ray diffraction analysis in terms of crystallite size and dislocation density. It was found that the best results [high transparency (88%) over the visible wavelength region, low sheet resistance of 12.8 X/square, the optical band gap of 3.76 eV, crystallite size of 49.5 nm and dislocation density of 1:42 Â 10 14 m À2 ] were achieved for the sample produced at a partial pressure of 1 Â 10 À4 mbar. Therefore, one can successfully control the physical properties of ITO films by varying the oxygen content of the evaporation system. The correlation between the band gap and carrier concentration in addition to the average crystallite size of films was also established.

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“…At a given rf power, the thermalization region shifts toward the target by increasing O 2 partial pressure. [102] This leads to the oxidation of the target [103,104] and possible re-sputtering of the film [105] and created the decreased deposition rate of the SBT thin film.…”

Section: Effect Of Argon-to-oxygen Ratio On Structural Propertiesmentioning

confidence: 99%

“…This reduces the deposition rate of film. Furthermore, at a given rf power density of 2.3W/cm 2 , the thermalization region shifts toward the target by increasing O 2 partial pressure [102] , leading to the oxidation of the target [103,104] and possible re-sputtering of the film [105] that would compound the decrease in the deposition rate. RTA) deposited at various oxygen partial pressures, indexed by assuming an orthorhombic cell (a=5.531Å, b=5.534Å, and c=24.98Å [8] ).…”

Section: Deposition Ratementioning

confidence: 99%

Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

Li¹

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Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2E c ), sufficient fatigue endurance against repetitive polarization switching. Layered perovskite structure SrBi 2 Ta 2 O 9 (SBT) thin film has attracted ever increasing attention because it exhibits fatigue-free property up to 10 12 cycles (even on Pt bottom electrode), excellent retention characteristics, and low leakage current density. However, two shortcomings are involved in SBT thin films: the low remnant polarization (2Pr<10μC/cm 2 ) and high annealing temperature (>800℃). Substitution at A or B site can effectively modify polarization properties. Trivalent elemental substitution such as Bi 3+ , La 3+ and Nd 3+ with the Sr 2+ site induces A-site cation vacancies to satisfy charge neutrality, which significantly improves the low-field polarization.This project aims to improve the polarization properties through doping, and at the same time to reduce the crystallization temperature of the Aurivillius phase. The Sr-deficient and Nd-doped SBT thin films are deposited via radio frequency magnetron sputtering. The relationship among deposition parameters, microstructure and polarization properties of Sr-deficient SBT thin films are discussed in details so that pure layered perovskite structure without pyrochlore is obtained. Based on this,

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The dynamics of reactive ion sputtering of SnSb and InSn alloys in an ArO2 atmosphere

Cited by 25 publications

References 4 publications

Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering

Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering

Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In $$_2$$ 2 O $$_3$$ 3 Nanostructures

Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

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