The dry and damp heat stability of chalcopyrite solar cells prepared with an indium sulfide buffer deposited by the spray-ILGAR technique

Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

“…Recently, nominal In 2 S 3 buffers were also prepared by the spray ion layer gas reaction 6 ͑Spray-ILGAR͒. The resulting CIGSSe-based solar cells yield comparable efficiencies 6 and stabilities 7 as corresponding CBD-CdS buffered references.…”

“…In the present study, the spray solution used is InCl 3 dissolved in ethanol and the reactive gas is H 2 S. A more detailed description can be found elsewhere. 6,7,14 Because of the cyclical nature of the Spray-ILGAR process, the thickness of the buffer layer can simply be adjusted by varying the number of spray cycles. A set of samples where this number has been varied between 0 ͑bare, uncovered CIGSSe absorber͒, 1, 2, 3, 4, and 6 was investigated.…”

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

“…The CdS fi lms deposited using the ILGAR technique 130,131 Also, indium(III) sulfi de can be used as a solar cell buffer layer. In 2 S 3 has been grown by the spray -ILGAR method using an elevated substrate temperature of between 100 and 400 ° C. 130,132,133 At 200 ° C, the fi lm was very compact and the grains were barely observable, but at 300 ° C and above, the fi lm became rough and crystallites could be clearly observed. According to XRD analysis, the fi lms were cubic and no signifi cant preferred orientation could be observed.…”

ZnS Nanodot Film as Defect Passivation Layer for Cu(In,Ga)(S,Se)2 Thin‐Film Solar Cells Deposited by Spray‐ILGAR (Ion‐Layer Gas Reaction)

“…[ 4 ] Cells made using Spray-ILGAR In 2 S 3 showed comparable effi ciencies and stabilities to those of reference cells with CdS buffer. [ 5,6 ] The Spray-ILGAR is a cyclic two-step process. In the fi rst step, an ionic precursor layer is deposited in an aerosol-assisted chemical-vapor deposition (AACVD) or spray-pyrolysis-like process.…”

“…The effi ciencies of the pure In 2 S 3 buffered cells are comparable with the CdS references, which are in good agreement with our previous report. [ 5,6 ] With the addition of the ZnS nanodot fi lm, the fi rst tests resulted in an average effi ciency of 14.7% and 15.1% for two samples of ZnS/In 2 S 3 , compared to 13.3% and 13.5% obtained with pure In 2 S 3 ( Table 1 ). Thus, the cell performance was clearly improved by replacing In 2 S 3 with ZnS/ In 2 S 3 .…”