The Dosimetry of Mixed Radiations, Involving More Than One Energy or Type of Radiation, with the R.P.S./A.E.R.E. Film Dosimeter

Jones, Bradley R.; Marshall, T.O.

doi:10.1080/00223638.1964.11737268

Cited by 6 publications

(2 citation statements)

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“…Usually radiation sensors have linear dose–response characteristics in certain region of doses. To cover more than one energy or type of radiation, the approach of using devices with combined structure is widely used (Jones and Marshall, 1964; Lee and Lee, 2001). The idea consists in covering parts of the device by filters to absorb some fraction of the incident radiation, thereby modifying the device response such that the ratio of the sensitivity of one filtered area to that of another is a function of the photon energy (Jones and Marshall, 1964).…”

Section: Resultsmentioning

confidence: 99%

“…To cover more than one energy or type of radiation, the approach of using devices with combined structure is widely used (Jones and Marshall, 1964; Lee and Lee, 2001). The idea consists in covering parts of the device by filters to absorb some fraction of the incident radiation, thereby modifying the device response such that the ratio of the sensitivity of one filtered area to that of another is a function of the photon energy (Jones and Marshall, 1964). The idea of using the filters can be extended: sections of the radiation sensor could differ in material thickness or composition.…”

Section: Resultsmentioning

confidence: 99%

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Thin films of (TeO₂)_1−x(In₂O₃)_x as gamma radiation sensors

Arshak

Korostynska

2003

Sensor Review

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Thin films of tellurium dioxide (TeO2) and indium oxide (In2O3) mixtures were investigated for γ‐radiation dosimetry purpose. Samples were fabricated using thermal vacuum evaporation technique. The electrical properties of mixed oxides thin films [(TeO2)1−x(In2O3)x, where x=0 and 10 per cent by weight] and their changes under the influence of γ‐radiation were investigated. Samples with contacts having a planar structure showed increase in the values of current with the increase in radiation dose up to a certain dose level. Thin films in the form of pn‐junctions were fabricated with (TeO2)1−x(In2O3)x as p‐type material and sulphur as n‐type material. These pn‐junctions exhibited Zener diode behaviour. The current‐voltage characteristics for as‐deposited and γ‐irradiated samples were recorded. The level of response for all the fabricated devices was found to be highly dependent on the composition of the exposed material.

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Section: Resultsmentioning

confidence: 99%