The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures

Abstract

A maskless approach of forming p-doped regions in Si wafers using the Ga source of a standard focused ion beam (FIB) system and the moderate activation temperatures of 400-700 C is demonstrated in this work. This simple and flexible route is accessible to many research labs and is successfully used to fabricate Si-based diodes and field-effect transistors (FETs). For the diodes, tunneling is found to be the forward current transport mechanism. The fabricated p-FET structures show excellent switching behavior with a high I D,ON /I D,OFF current ratio of 5 Â 10 6 .