2019 Photonics &Amp; Electromagnetics Research Symposium - Fall (PIERS - Fall) 2019
DOI: 10.1109/piers-fall48861.2019.9021849
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The Distribution Measurement of the Photo-induced Plasma in Semiconductor by Near-field Scanning Microwave Microscopy

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“…The core idea of the technology is to use a massless scattering "probe" to measure the electromagnetic field, replacing the probe transport mechanism with an ultra-fast scanning laser. The resolution of the imaging is affected by the arrangement of the plasma, which mainly depends on the diameter of the laser beam [34] and can be significantly smaller than the aperture of a conventional probe. In microwave bands, super resolution and ultra-fast imaging speed can be realized at the same time [28].…”
Section: A the Scanning Plasma Scattering Technologymentioning
confidence: 99%
“…The core idea of the technology is to use a massless scattering "probe" to measure the electromagnetic field, replacing the probe transport mechanism with an ultra-fast scanning laser. The resolution of the imaging is affected by the arrangement of the plasma, which mainly depends on the diameter of the laser beam [34] and can be significantly smaller than the aperture of a conventional probe. In microwave bands, super resolution and ultra-fast imaging speed can be realized at the same time [28].…”
Section: A the Scanning Plasma Scattering Technologymentioning
confidence: 99%