The dissolution of fused silica in molten silicon

SiO gas emission and triple line dynamics of small silicon droplets on quartz

“…As described in the last section the etching reaction by reactive wetting of quartz single crystals by liquid silicon mainly takes place in the vicinity of the triple line. This fits to the observation of Chaney and Varker [13] who found an increased reactivity at the triple line for fused silica rods in silicon melts. The dissolution at the triple line during wetting experiments and a vibrational movement related to the emission of SiO was also reported by Fujii et al [14].…”

Silicon Crystallization Technologies

“…Thus, the equilibrium always favors the further dissolution of the quartz crucible. The dissolution rate for fused quartz glass in contact with liquid silicon was reported to be in the range of 1.15 Â 10 À5 cm/min in the bulk of the melt and up to 8.4 Â 10 À5 cm/min at the triple point melt-crucible-gas (Chaney and Varker, 1976). A correlation with melt stirring was reported by Hirata and Hoshikawa (1980) and a certain correlation to the boron concentration was found by Abe et al (1998), but the reported values were all in the same range.…”

Quality evaluation of resistivity-controlled silicon crystals

“…Most of the oxygen atoms evaporate from the melt surface as volatile silicon monoxide (SiO), but some of them incorporate into a silicon crystal through the crystal-melt interface [13,14]. Since oxygen was identified by IR absorption in Czochralski silicon crystals in 1956 [15], IR spectroscopy has been a routine technique to determine the oxygen concentration in silicon crystals (ASTM F121).…”