The diffusion of vacancies near a diamond (001) surface

Hu, Xiaojun; Dai, Yong; Li, R.B.; Shen, Haiping; He, Xiancong

doi:10.1016/s0038-1098(02)00069-8

Cited by 25 publications

(19 citation statements)

References 15 publications

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“…As shown in Figure , the uniform ion beam was slightly tilted with an angle from 5° to 10° to avoid the channeling effect. Vacancies were created at the inlet end of the ion track close to the surface where outward diffusion might occur because the activation energy of vacancy migration is low near the surface . Vacancies were also created at the middle and end of the projected range at a depth of a few micrometer where the surface effects are negligibly small.…”

Section: Methodsmentioning

confidence: 99%

Diffusion of Vacancies Created by High‐Energy Heavy Ion Strike Into Diamond

Onoda

Tatsumi

Haruyama

et al. 2017

Physica Status Solidi (a)

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A novel technique is proposed to measure how far vacancies diffuse from the initial damaged region with sub-micrometer resolution. Vacancies created by a single heavy ion with high energy are considered. The most important feature of the single ion track is the quasi-one-dimensional vacancy distribution with high volume density, which exceeds 10 19 vacancies cm À3 . After annealing, the vacancies combine with nitrogen impurities to form nitrogen vacancy (NV) centers. With increasing annealing temperature and time, the distribution of NV centers becomes wider. Therefore, the vacancies created by a single heavy ion are suitable to investigate vacancy diffusion. The activation energy of vacancy migration in diamond is determined to be 2.12 eV, which is in reasonable agreement with reported values.

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Section: Methodsmentioning

confidence: 99%

Diffusion of Vacancies Created by High‐Energy Heavy Ion Strike Into Diamond

Onoda

Tatsumi

Haruyama

et al. 2017

Physica Status Solidi (a)

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“…The negatively charged monovacancy's higher activation energy (Breuer and Briddon, 1995) ensures that monovacancy diffusion occurs predominantly in the neutral charge state (Breuer and Briddon, 1995), although a negative monovacancy can convert to a neutral monovacancy in a reversible charge transfer process (Davies et al, 1992). The diffusion constant D of the neutral monovacancy is (Hu et al, 2002;Orwa et al, 2012)…”

Section: E Low-pressure-high-temperature (Lpht) Annealingmentioning

confidence: 99%

Sensitivity optimization for NV-diamond magnetometry

et al. 2020

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Solid-state spin systems including nitrogen-vacancy (NV) centers in diamond constitute an increasingly favored quantum sensing platform. However, present NV ensemble devices exhibit sensitivities orders of magnitude away from theoretical limits. The sensitivity shortfall both handicaps existing implementations and curtails the envisioned application space. This review analyzes present and proposed approaches to enhance the sensitivity of broadband ensemble-NV-diamond magnetometers. Improvements to the spin dephasing time, the readout fidelity, and the host diamond material properties are identified as the most promising avenues and are investigated extensively. This analysis of sensitivity optimization establishes a foundation to stimulate development of new techniques for enhancing solid-state sensor performance.

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“…An annealing step, is required such that vacancies become mobile and diffuse through the lattice. Several studies on diffusion near to the surface have been done in recent years [30][31][32][33] . Here we model the diffusion process during annealing and investigated its influence on the NV centre yield.…”

Section: B Annealingmentioning

confidence: 99%

Statistical investigations on nitrogen-vacancy center creation

Antonov¹,

Häußermann²,

Aird³

et al. 2014

Applied Physics Letters

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Quantum information technologies require networks of interacting defect bits. Colour centres, especially the nitrogen vacancy (NV − ) centre in diamond, represent one promising avenue, toward the realisation of such devices. The most successful technique for creating NV − in diamond is ion implantation followed by annealing. Privious experiments have shown that shallow nitrogen implantation (<10keV) results in NV − centres with a yield of 0.01 − 0.1%. We investigate the influence of channeling effects during shallow implantation and statistical diffusion of vacancies using molecular dynamics (MD) and Monte Carlo (MC) simulation techniques. Energy barriers for the diffusion process were calculated using density functional theory (DFT). Our simulations show that 25% of the implanted nitrogens form an NV centre, which is in good agreement with our experimental findings.

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The diffusion of vacancies near a diamond (001) surface

Cited by 25 publications

References 15 publications

Diffusion of Vacancies Created by High‐Energy Heavy Ion Strike Into Diamond

Diffusion of Vacancies Created by High‐Energy Heavy Ion Strike Into Diamond

Sensitivity optimization for NV-diamond magnetometry

Statistical investigations on nitrogen-vacancy center creation

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