The diffusion barrier effect of a vanadium layer in the formation of nickel silicides

Kotake, H.; Oana, Yasuhisa; Watanabe, Ikuo

doi:10.1016/0040-6090(81)90403-x

Cited by 9 publications

(3 citation statements)

References 8 publications

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“…In order to achieve a controlled contact, silicide layers, mainly PtSi and Pd2Si, are widely used in metallization schemes for Si (308). Sputter depth profiling studies of silicide formation and depth compositional measurements of silicide films were performed for Pd (306,307,518,(576)(577)(578), Ni (518,563,576,(579)(580)(581), Ti (305, 307, 518), V (518,579), Mo (306, 307,582); Ta (306, 307), and W (583) as well as Nb, Zr, Pt, and Rh (518). Usually thermal annealing is used for silicide formation, but it can also be achieved by ion bombardment (305-307).…”

Section: Metal Filmsmentioning

confidence: 99%

Sputter Depth Profiling of Microelectronic Structures

Zinner

1983

J. Electrochem. Soc.

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Reviewed are the principles and applications of sputter depth profiling for the analysis of semiconductor and microelectronic materials. Various techniques are based on sputter removal whereby either the sputtered species (in SIMS, SCANIIR) or the remaining surface (AES, XPS, ISS) are investigated. In spite of its increasing importance, there are many problems associated with sputter etching. After a general survey of the principles, a detailed discussion is devoted to the many effects which can distort sputter depth profiles and limit depth resolution. These effects can be caused by instrumental factors (nonuniformity of erosion, beam impurities, vacuum contaminants) and the sample composition or can be due to the analysis method used (information depth, matrix effects, detection limit, sample consumption). Most important are the effects caused by the sputtering ion beam itself. Among these are notably preferential sputtering, atomic mixing, surface roughness as a result of the sputter process, sample charging, surface transport, and chemical reduction. The review of applications concentrates on the measurement of the distribution of dopants and impurities in semiconductors, on the study of insulating films (in particular the Si/SiO~ interface and the oxidation of GaAs), and on the metallization problem in Si and GaAs technology.The ever-increasing miniaturization of electronic devices in VLSIC technology (1) places new demands on analytical techniques for their characterization (2, 3). Of special interest is the measurement of elemental distributions, in particular the measurement of dopant distributions in the semiconductor substrate (4, 5) and the analysis of diffusive and reactive processes between metal, semiconductor, and dielectric films (6, 7) which are the basic elements of microelectronic structures. The analytical requirements for measurement techniques include good spatial resolution as well as elemental sensitivity and specificity. Although there are interesting questions to be asked with respect to lateral dimensions, because of the planar structure of most microelectronic devices, methods for the measurement of elemental concentrations as a function of depth are of special importance. An example for the requirements for the depth resolution of such methods is given in Fig. 1 which shows calculated depth distributions of dopants in base and camel collector of a monolithic hot electron transistor (MHET) with an extremely shallow barrier raising implant.An overview of methods for the measurement of depth profiles is given in Table I. The so-called nondestructive techniques are so named n~t because they necessarily leave the sample undamaged, but because the sample surface does not have to be removed in order to obtain information about the inside. The sample interior is rather probed with penetrating ion or electron beams whereby the depth information is obtained via the energy loss experienced by the particles while traversing the sample. Rutherford backscattering spectroscopy (RBS) is based on the ...

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Section: Metal Filmsmentioning

confidence: 99%

Sputter Depth Profiling of Microelectronic Structures

Zinner

1983

J. Electrochem. Soc.

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“…Extensive investigations have been undertaken on these diffusion barriers; [2][3][4][5] however, most of them emphasized the electrical or mechanical properties of the diffusion products. Diffusion-induced structural and morphological changes were studied on only a few systems.…”

Section: Introductionmentioning

confidence: 99%

Diffusional breakdown of nickel protective coatings on copper substrate in silver-copper eutectic melts

Zhuang¹,

Eagar²

1997

Metall Mater Trans A

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Diffusion couples with electrolessly plated nickel diffusion barriers between copper substrates and silver-copper eutectic alloys were tested at 800 ЊC and 850 ЊC, respectively. Growth of (Cu, Ni, Ag) ternary solid solution into the melt was observed at both temperatures. The growth pattern changed from cellular to dendritic as the temperature was increased from 800 ЊC to 850 ЊC. The nonplanar growth morphology can be explained in terms of constitutional supercooling in the melt. Kinetics of (Cu, Ni, Ag) solid solution growth were found to be controlled by interdiffusion at the interface of the nickel barrier and the growing solid-state phase. Local breakdown of the nickel diffusion barrier started once the (Cu, Ni, Ag) solid solution reached the copper substrate. Silver diffused from the silver-copper melt, through the ternary solid solution, dissolving copper and forming silver-copper liquid along copper grain boundaries. Ultimately, the nickel barrier was totally converted to the ternary solid solution, broke up, and floated into the liquid. Dissolution of the copper substrate occurred subsequently. A thin layer of chromium undercoating proved to be very effective in extending the protection time of the nickel diffusion barrier, due to the extremely low solubility of both copper and silver in chromium at these test temperatures.

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“…Possibilities to reduce the silicide-A1 interaction include the incorporation of barrier layers [13, 141. In addition to tests with Cr and Ti [15], experiments were made with V films [16]. It was found that the introduction of oxygen into the V layers can lead to a considerable improvement of the metallurgical stability of the film systems [17 to 191. In thin film systems the interdiffusion along "rapid" diffusion paths such as grain boundaries [14, 201, for example, the formation of intermetallic phases [13, 14, 211, and the reconstruction of the films as a consequence of the relaxation of film stresses [22, 231 are found to dominate in most cases.…”

Section: Introductionmentioning

confidence: 99%

Film Thickness Effects and their Influence on the Stability of the CrSiO/VO/Al Film Systems

Bäther

Zies

1990

phys. stat. sol. (a)

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The effect of the film thickness on the metallurgical and electrical stability of CrSiO/VO/Al film systems is investigated. The film systems are prepared on Si/SiO2 substrates by dc planar magnetron sputtering in vacuum sequence. Their electrical resistance and TCR are measured. The film systems are characterized by means of TEM and TED and, in addition, by SIMS, RBS, and spark‐induced mass spectroscopy. Although the film system is thermally stable in general up to 570°C/1 h after heat treatment in vacuum, (p ≦ 1 mPa) considerable changes of properties are observed already above 350 °C for Al layers less than 300 nm and VO layers less than 20 nm thick. The reconstruction of the Al layer and insufficient formation of the VO barrier layer are discussed as causes for this behaviour.

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The diffusion barrier effect of a vanadium layer in the formation of nickel silicides

Cited by 9 publications

References 8 publications

Sputter Depth Profiling of Microelectronic Structures

Sputter Depth Profiling of Microelectronic Structures

Diffusional breakdown of nickel protective coatings on copper substrate in silver-copper eutectic melts

Film Thickness Effects and their Influence on the Stability of the CrSiO/VO/Al Film Systems

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