The diagnostics of thermal kinetic coefficients for the optimization of film bolometer properties

Medvedev, Yu. V.; Nikolaenko, Yu. M.; Grishin, Alexander M.; Khartsev, Sergiy

doi:10.1134/1.1435899

Cited by 6 publications

(9 citation statements)

References 11 publications

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“…The difficulties of such simple approaches consist in the choice of appropriate duration of pulses and very high requirements on receiver sensitivity and, hence, on relative temperature coefficient of film resistance. Complete version of nonstationary method was developed recently for determination of full set of thermal kinetic coefficients (TKC) of film structures [2,4]. However, the technical requirements for estimation of R FS are significantly weaker so that estimation is possible even in the case when the experimental curve ∆T F (t) does not contain directly the high speed part on the scale of τ 1 .…”

Section: Methods Of R Fs Measurementmentioning

confidence: 99%

“…The computer based nonstationary method of correct measurement of R FS was described by us in Ref. [2,4]. Existing experimental results demonstrate the principal possibility of R FS variation in wide range 10 2] but reliable method of variation is absent now and there is only qualitative understanding of influence of some experimental parameters on the R FS value such as substrate roughness or mismatch of film and substrate materials.…”

Section: Introductionmentioning

confidence: 97%

“…Another requirement to R FS exists in bolometric application of film structures. For direct optimization of sensitivity and operating speed of HTSC and room temperature film bolometers, R FS must be increased by many orders of magnitude [2,3]. Traditional way of optimization by means of application of hybrid construction is restricted for achievement of extreme parameters and expensive for mass production of devices.…”

Section: Introductionmentioning

confidence: 99%

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Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Nikolaenko¹,

Medvedev

Genenko

et al. 2006

Phys. Status Solidi (c)

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Results of measurement of thermal resistance (R FS ) of film substrate interface of 10 nm (Fe 1-x Co x ) 1-y Cu y film on Si substrate with 50 nm SiO 2 sublayer are presented. The estimated magnitude is two orders greater then R FS of epitaxial manganite films on StTiO 3 substrate with and without sublayer. The significant increase of R FS is explained by granular structure of film with average size of grain about 10 nm. In this case the additional thermal barier in the film-substrate interface is appeared. It provides the change of regime of phonons propagation from ballistic to diffusion one. The principle possibility of variation of R FS in wide range as a task of nanotechnology is discussed.

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Section: Methods Of R Fs Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Nikolaenko¹,

Medvedev

Genenko

et al. 2006

Phys. Status Solidi (c)

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“…This property is very useful for the bolometric applications. By the selection of solid solution composition and optimal regime of annealing, it is possible to obtain high value of the relative temperature coefficient of resistance d(lnR)/dT up to 10 −1 K −1 at room temperature [3,4]. In contrast with high-temperature superconductors (HTSC) and semiconductors, the bolometric response of such film to microwave irradiation contains no signals of other nature.…”

Section: Introductionmentioning

confidence: 99%

“…In contrast with high-temperature superconductors (HTSC) and semiconductors, the bolometric response of such film to microwave irradiation contains no signals of other nature. This property of the films was used to investigate the bolometric response structure and to develop a computer based method for measurements of a full set of thermal kinetic coefficients of film structures [4,5].…”

Section: Introductionmentioning

confidence: 99%

Inelastic Relaxation of Oxygen and Low-Field Magnetoresistance in La_0.65Ca_0.35MnO₃Films on Ferroelectric Ceramics Substrates

et al. 2004

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Galvanomagnetic properties of polycrystalline La 0.65 Ca 0.35 MnO 3 films with a thickness of 0.2 µm deposited onto Pb 2.9 Ba 0.05 Sr 0.05 (Zr 0.4 Ti 0.6 )O 3 ferroelectric ceramics substrates were investigated. We discovered an irreversible increase in film resistance after numerous inversions of substrate polarization. This phenomenon was investigated several times for three film structures. The typical duration of the process of a monotonic 3-5 times increase in film resistance was 3-6 hours. The long-time relaxation of macroscopic film resistance is explained by dielectrization of film intercrystallite boundaries. The typical size of crystallites of both the film and the substrate is 3−10 µm. Such small size explains the fact of macroscopic homogeneity of film conductivity, when the specific resistance increases from 1.8 × 10 −2 to 1.8 Ω cm. A growth in resistance of narrow (10 nm) regions of film is explained by the redistribution of oxygen anions under the action of inhomogeneous mechanical stress. The stress between crystallites appears due to inverse piezoelectric effect of ferroelectric substrate.

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Long time relaxation of resistance in La _0.8 Sr _0.2 MnO ₃ ceramics and La _0.65 Ca _0.35 MnO ₃ films on ferroelectric substrates

Medvedev

Mezin

Nikolaenko

et al. 2004

phys. stat. sol. (c)

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(Zr 0.4 Ti 0.6 )O 3 ferroelectric ceramics substrates have been investigated. We have dicovered the monotonic irreversible increase of the film resistance by 3-5 time of value during several hours after multiple inversion of substrate polarization. The long-time relaxation (LTR) of film resistance is explained by dielecrtrization of film intercrystallite boundaries as a result of oxygen redistribution under action of inhomogeneous mechanical stress. In addition, the LTR of resistance of La 0.8 Sr 0.2 MnO 3 and La 0.6 Sr 0.2 Mn 1.2 O 3 ceramic samples has been investigated under action of different kind of mechanical stress: stretch, compression and hydrostatic press. Time dependence of resistance is described by R 0 +∆Rexp(-t/τ). The magnitude of LTR is 5-10 time greater then fast variation of resistance under action of stress. The sign of ∆R is dependent on the kind of stress. The time constant (τ) has the value of 3-9 hours.

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The diagnostics of thermal kinetic coefficients for the optimization of film bolometer properties

Cited by 6 publications

References 11 publications

Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Inelastic Relaxation of Oxygen and Low-Field Magnetoresistance in La_0.65Ca_0.35MnO₃Films on Ferroelectric Ceramics Substrates

Long time relaxation of resistance in La _0.8 Sr _0.2 MnO ₃ ceramics and La _0.65 Ca _0.35 MnO ₃ films on ferroelectric substrates

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The diagnostics of thermal kinetic coefficients for the optimization of film bolometer properties

Cited by 6 publications

References 11 publications

Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Interface thermal resistance of nanostructured FeCoCu film and Si substrate

Inelastic Relaxation of Oxygen and Low-Field Magnetoresistance in La0.65Ca0.35MnO3Films on Ferroelectric Ceramics Substrates

Long time relaxation of resistance in La 0.8 Sr 0.2 MnO 3 ceramics and La 0.65 Ca 0.35 MnO 3 films on ferroelectric substrates

Contact Info

Product

Resources

About

Inelastic Relaxation of Oxygen and Low-Field Magnetoresistance in La_0.65Ca_0.35MnO₃Films on Ferroelectric Ceramics Substrates

Long time relaxation of resistance in La _0.8 Sr _0.2 MnO ₃ ceramics and La _0.65 Ca _0.35 MnO ₃ films on ferroelectric substrates