The development of poled polyimide dielectric layers for simultaneous testing and light guiding applications in MCM-Ds

Mechtel, Deborah M.; Charles, Harry K.; Francomacaro, A. S.

doi:10.1016/s0026-2714(01)00132-9

Cited by 2 publications

(1 citation statement)

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“…The resulting capacitances and dielectric constant can be found in Table I. Capacitances fall within reasonable values for stabilized a-Se; however, calculated values for PI are higher than expected, resulting in a relative permittivity higher than typically found in literature and reported in the supplier's datasheet [47], [48], [49], [50]. As information for this particular PI with the fabrication recipe used has not previously been reported, it is possible that the material properties are slightly different from those previously established.…”

Section: Resultssupporting

confidence: 55%

Performance Evaluation of an Amorphous Selenium Photodetector at High Fields for Application Integration

et al. 2023

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Polyimide (PI) has been utilized as a hole-blocking layer (HBL) in high-resistivity photoconductors such as amorphous selenium (a-Se) and amorphous lead oxide (a-PbO). It prevents hole injection from the positively biased electrode and suppresses the dark current of the detector. To determine the performance parameters of an a-Se/PI detector for readout design and specification for different radiation detection applications, knowledge of the accurate voltage drop within the photoconductor is crucial. Here, we precisely determine the voltage drop across a-Se when interfaced with a thin layer of PI (1 µm) and characterize its temporal resolution (rise time and jitter), dynamic range, and quantum efficiency (QE) as a function of the electric field. The photoresponse of the detector is characterized using light-emitting diodes in the ultraviolet (UV, 355-400-nm wavelength) and visible (400-533-nm wavelength) regions of the light spectrum. We find the voltage drop across a-Se as 91% of the total applied voltage. This results in a QE near unity at 405 nm for corrected fields beginning at 45 V/µm. At fields of 50 V/µm, we observe rise times of 3.7 ns and jitter of 130 ps.

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