The development of MOCVD techniques for ferroelectric and dielectric thin film depositions

Kinetics and Mechanisms of MOCVD Processes for the Fabrication of Sr-Containing Films From Sr(hfac)2Tetraglyme Precursor

“…Strontium-based materials in the form of thin films are currently attracting growing interest in several strategic areas. Thus, transparent Sr-containing fluoride glasses (such as SrAlF 5 ) have a key role for optical coatings and luminescent devices [1][2][3][4][5] and strontium titanates are of interest for their applications as high-K materials in DRAMs, [6][7][8][9][10][11][12][13][14][15][16][17] while Ln-doped Sr sulfide 18 and Bi-Sr-Ca-Cu mixed oxides 19 are efficient materials for electroluminescent devices and superconducting electronics, respectively. Particular attention has recently been devoted also to SrBi 2 Ta 2 O 9 (SBT) ferroelectric oxides due to the great potentiality for ferroelectric nonvolatile random access memories (FeRAM).…”

“…Strontium-based materials in the form of thin films are currently attracting growing interest in several strategic areas. Thus, transparent Sr-containing fluoride glasses (such as SrAlF 5 ) have a key role for optical coatings and luminescent devices − and strontium titanates are of interest for their applications as high-K materials in DRAMs, − while Ln-doped Sr sulfide and Bi−Sr−Ca−Cu mixed oxides 19 are efficient materials for electroluminescent devices and superconducting electronics, respectively. Particular attention has recently been devoted also to SrBi 2 Ta 2 O 9 (SBT) ferroelectric oxides due to the great potentiality for ferroelectric nonvolatile random access memories (FeRAM). − SBT films can be fabricated through several techniques including pulsed laser deposition, , sol−gel, , metal−organic deposition, − and metal−organic chemical vapor deposition (MOCVD). − Among them, MOCVD appears the most viable route for the semiconductor industry because of the superior step coverage compared to that of other deposition techniques.…”

Key Integration Techniques and Issues for Silicon-Based Ferroelectric Devices

“…MOCVD (metalorganic chemical vapor deposition) is currently paid more attention to for piezoelectric and ferroelectric film preparations [4]. The advantages of MOCVD are (1) the opportunity to deposit epitaxial thin film relatively easily because of the molecular reaction, lay-down, and incorporation into the crystal lattice at the surface, (2) homogeneous deposition over large areas, (3) compatibility with the semiconductor processing, and (4) opportunity to achieve a high-quality step coverage even for 3D structures of high aspect ratio.…”