Abstract:Electroabsorption modulators (EAMs) with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells (AICD-SQWs) based on In-GaAlAs material. For this purpose, the electroabsorption coefficient is calculated over a range of wells layer strain from compressive (CS) to tensile (TS). The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra, and their Kramers-Kr… Show more
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