The design and analysis of a RF CMOS bandpass filter

Chang, Yuyu; Choma, J.; Wills, Jack

doi:10.1109/iscas.2000.856406

Cited by 24 publications

(11 citation statements)

References 9 publications

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“…For these reasons, several papers have been presented in the literature proposing alternative solutions with active schemes and suitable for integration. Anyway, many of them deals with grounded solutions [1][2][3][4] and propose theoretical solutions difficult to implement for practical applications. Different solutions for active inductors have been presented also by the same authors in the last years [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

RF active circuit simulating a floating inductance

Pantoli

Stornelli

Leuzzi

2015

2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop (INMMiC)

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In this paper a new design scheme simulating a floating inductive behavior at RF frequency is presented. The proposed floating active inductor shows a very high quality factor, high linearity and is suitable for many microwave applications and ICs.The design is a fully symmetrical two-port and reciprocal structure, based on two cascaded pairs of highly linear capacitance gyrators. It shows an inductance value of 370nH at 220MHz with a quality factor greater of 6e4.A prototype board has been fabricated with discrete components and tested with successfully results.Index Terms -Active circuits, floating inductors, quality factor, dynamic range, filters.

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Section: Introductionmentioning

confidence: 99%

RF active circuit simulating a floating inductance

Pantoli

Stornelli

Leuzzi

2015

2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop (INMMiC)

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“…If properly designed, they may have high dynamic range and allow to keep the Q factor constant in tunable filters, when used in conjunction with varactor diodes. It is well known that an inductor can be replaced by a gyrator loaded by a capacitance ; in the literature, several gyrator‐based solutions have been proposed to simulate an inductive behavior in the RF and microwave frequency range . In this paper, a new approach is described for the implementation of active inductors (AIs) with high linearity and wide dynamic range, and requiring a single transistor as the active device.…”

Section: Introductionmentioning

confidence: 99%

Single transistor high linearity and wide dynamic range active inductor

Leuzzi

Stornelli

Pantoli

et al. 2013

Circuit Theory & Apps

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In this paper, an active inductor (AI) with high linearity and high dynamic range, including a minimum number of components, is presented. The AI is composed by a single transistor, and by a passive compensation network; the latter allows the control of the values of both the inductance and the series resistance.In order to show the feasibility of the proposed AI for filter applications, a prototype board on a TLX8 substrate with a first-order active band-pass filter has been fabricated and tested. The filter has a center frequency of 2470 MHz (useful for Bluetooth applications) and a measured noise figure (NF) of 9 dB with a À5 dBm P 1 dB compression point, and a 75 dB dynamic range.By considering the filter NF, bandwidth and the P 1 dB, compression point, the dynamic range of the filter from noise floor (À174 dBm/Hz) to P 1 dB compression point is approx. 75 dB. The power consumption is approx. 5 mW. Linear and nonlinear analysis and measurements have shown an unconditionally stable filter response. A table resuming the aforementioned performance is given (see Table I) showing also comparisons with the state of the art. For all these reasons, the natural application of the proposed filter is as a post-selector in radio communications systems, after the low noise amplifier, or as a channel selector in the receiver IF chain. Moreover, it can be used for RF or microwave band selection application, as wakeup radio systems [29], where high dynamic range and selectivity are required without stringent noise performance. CONCLUSIONSWe have proposed a high-Q, high-linearity, and high dynamic range AI, requiring a minimum number of components. A high quality factor band-pass filter including the AI has been designed as a demonstrator. A prototype board on a TLX8 substrate has been fabricated and tested in order to show the AI feasibility for RF and microwave applications. The filter has a center frequency of 2470 MHz, in the Bluetooth frequency range, a measured NF of 9 dB, and a À5 dBm P 1 dB compression point. The resulting 75 dB dynamic range confirms the theoretical predictions and simulation results. The proposed AI, if properly designed, is unconditionally stable in the whole frequency range and can be used in practical applications. We remark that this aspect is usually underestimated in the literature, and, to our best knowledge, only few works give information about AI stability, power handling, and noise. SINGLE TRANSISTOR ACTIVE INDUCTOR 285

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“…The circuits involving a common gate stage have a wide tuning range, but require negative resistance for high quality inductors. It is also possible to form active inductors using three or more transistors [9] and the quality factor can be improved by boosting the loop gain through feedback [10].…”

Section: Introductionmentioning

confidence: 99%

Low Power Low Noise Tunable Active Inductor for Narrow Band LNA Design

Manjula¹,

Malarvizhi²

2012

IJCA

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This paper presents a low power, low noise and high quality factor tunable single ended active inductor suitable for designing multiband RF front end circuits. The active inductor circuit uses differential configuration as positive transconductor and PMOS cascode structure as negative transconductor of a gyrator to reduce the noise voltage. It uses MOS transistor as a feedback resistor to provide possible negative resistance to reduce the inductor loss to enhance the quality factor. Also this structure provides wide inductive bandwidth and high resonance frequency. The tuning of center frequency and quality factor for multiband operation is achieved through the controllable current source. The center frequency tuning range of the active inductor varies from 3.9 GHz to 12.3 GHz. The designed active inductor and LNA are simulated in 180nm CMOS process using HSPICE simulation tool. Simulation results of the active inductor shows an inductive bandwidth varies from 6.45 MHz to 6.3 GHz with the center frequency 6.3 GHz. The inductance value ranges from 5nH to 550nH respectively. It has the less noise voltage of 12nV/√Hz to 5.6nV/√Hz for the designed tuning range and consumes less power of 0.65mW. The Low noise amplifier achieves the gain of 19dB, low noise figure of 2.1dB and consumes low power of 4.2mW.

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The design and analysis of a RF CMOS bandpass filter

Cited by 24 publications

References 9 publications

RF active circuit simulating a floating inductance

RF active circuit simulating a floating inductance

Single transistor high linearity and wide dynamic range active inductor

Low Power Low Noise Tunable Active Inductor for Narrow Band LNA Design

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