The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts

Svensson, Johannes; Sourab, Abdelrahim A.; Tarakanov, Yury A.; Lee, Dong Su; Park, Seung Joo; Baek, Seung Jae; Park, Yung Woo; Campbell, Eleanor E. B.

doi:10.1088/0957-4484/20/17/175204

Cited by 42 publications

(47 citation statements)

References 28 publications

(53 reference statements)

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“…Svensson et al studied the Schottky barrier height in Pd-CNT contacts for eight CNTs with different diameters using the activation energy method. 81 The Schottky barrier heights were found to be inversely proportional to the diameter as expected due to the decrease in band gap with increasing diameter (Figure 12(b)). Since Schottky barrier heights in CNT-metal contacts are expected to depend both on CNT diameter and metal work function, it is difficult to distinguish the impact of each of these contributions separately if values from devices with different contact metals and CNTs are compared.…”

Section: A Measurements Of Schottky Barrier Heightssupporting

confidence: 62%

“…80 Due to these difficulties the activation energy method is the most commonly used to measure Schottky barrier heights in CNT-metal contacts. 34,36,[81][82][83][84][85][86] Even though scanning photocurrent measurements have been used to image the depletion region in CNT-metal contacts, quantitative estimates of the Schottky barrier heights using the photoelectric effect are still lacking. 87 …”

Section: Schottky Barrier Height Measurement Techniquesmentioning

confidence: 99%

“…34 However, instead of measuring only at large gate voltages the activation energy was extracted at a range of voltages ( Figure 13). The activation energy was plotted as a function of gate voltage and a Schottky barrier height of 360 meV extracted from the point 81 extracted from on-state currents 67 and theoretical calculations. 58 The solid line corresponds to the dependence expected from the Schottky-Mott relationship (Eq.…”

Section: A Measurements Of Schottky Barrier Heightsmentioning

confidence: 99%

“…Svensson et al who used a similar technique as Chen et al 36 to study the dependence of the Schottky barrier height on the diameter of Pd contacted CNTs observed an activation energy that becomes negative for sufficiently high negative or positive gate voltages (Figure 11). 81 Tunneling dominates transport through CNTFETs at such gate voltages resulting in a small contact resistance, and thus, the temperature dependence of series resistance through the bulk part of the CNT which is opposite to that of thermionic emission give rise to the negative activation energy.…”

Section: A Measurements Of Schottky Barrier Heightsmentioning

confidence: 99%

“…97 To summarise the experimental results, the Schottky barrier heights from the activation energy studies 34,36,81,83,84,86 where the CNT diameter was determined are plotted as a function of the metal work function 98 in Figure 16. In addition, results from Chen et al who extracted the Schottky barrier height from the on-current for three different metals are also included.…”

Section: A Measurements Of Schottky Barrier Heightsmentioning

confidence: 99%

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Schottky barriers in carbon nanotube-metal contacts

Svensson

Campbell

2011

Journal of Applied Physics

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Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability Applied Physics Letters 95, 264103 (2009) Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effect transistors such as high mobility, good electrostatics due to their small diameter allowing for aggressive gate length scaling and capability to withstand high current densities. However, in spite of the exceptional performance of single transistors only a few simple circuits and logic gates using CNTs have been demonstrated so far. One of the major obstacles for large scale integration of CNTs is to reliably fabricate p-type and n-type ohmic contacts. To achieve this, the nature of Schottky barriers that often form between metals and small diameter CNTs has to be fully understood. However, since experimental techniques commonly used to study contacts to bulk materials cannot be exploited and studies often have been performed on only single or a few devices there is a large discrepancy in the Schottky barrier heights reported and also several contradicting conclusions. This paper presents a comprehensive review of both theoretical and experimental results on CNT-metal contacts. The main focus is on comparisons between theoretical predictions and experimental results and identifying what needs to be done to gain further understanding of Schottky barriers in CNT-metal contacts.

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Section: A Measurements Of Schottky Barrier Heightssupporting

confidence: 62%

Section: Schottky Barrier Height Measurement Techniquesmentioning

confidence: 99%

Section: A Measurements Of Schottky Barrier Heightsmentioning

confidence: 99%

Section: A Measurements Of Schottky Barrier Heightsmentioning

confidence: 99%

Section: A Measurements Of Schottky Barrier Heightsmentioning

confidence: 99%

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Schottky barriers in carbon nanotube-metal contacts

Svensson

Campbell

2011

Journal of Applied Physics

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178

134

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Ternary Transition Metal Chalcogenide Nb₂Pd₃Se₈: A New Candidate of 1D Van der Waals Materials for Field‐Effect Transistors

Jeong

Choi

Jeon

et al. 2021

Adv Funct Materials

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In this work, high-quality 1D van der Waals (vdW) Nb 2 Pd 3 Se 8 is synthesized, showing an excellent scalability from bulk to single-ribbon due to weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that this novel Nb 2 Pd 3 Se 8 is a semiconducting material, displaying indirect-to-direct bandgap transition with decreasing the number of unit-ribbons from bulk to single. Field effect transistors (FETs) fabricated on the mechanically exfoliated Nb 2 Pd 3 Se 8 nanowires exhibit n-type transport characteristics at room temperature, resulting in the values for the electron mobility and I on /I off ratio of 31 cm 2 V −1 s −1 and ≈10 4 , respectively. Through transport measurements at various temperatures from room temperature down to 90 K, it is confirmed that Nb 2 Pd 3 Se 8 FETs can achieve negligible Schottky barrier height (SBH) for the Au contacts at the temperature range, displaying clear ohmic contact characteristics. Furthermore, top-gated FETs fabricated with the Al 2 O 3 dielectric layer are studied simultaneously with back-gated FETs.

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Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation

Emelianov

Nekrasov

Moskotin

et al. 2021

Adv Elect Materials

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The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer‐scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single‐walled carbon nanotube (SWCNT) optoelectronic properties through localized two‐photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field‐effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two‐photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT‐based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.

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The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts

Cited by 42 publications

References 28 publications

Schottky barriers in carbon nanotube-metal contacts

Schottky barriers in carbon nanotube-metal contacts

Ternary Transition Metal Chalcogenide Nb₂Pd₃Se₈: A New Candidate of 1D Van der Waals Materials for Field‐Effect Transistors

Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation

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The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts

Cited by 42 publications

References 28 publications

Schottky barriers in carbon nanotube-metal contacts

Schottky barriers in carbon nanotube-metal contacts

Ternary Transition Metal Chalcogenide Nb2Pd3Se8: A New Candidate of 1D Van der Waals Materials for Field‐Effect Transistors

Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation

Contact Info

Product

Resources

About

Ternary Transition Metal Chalcogenide Nb₂Pd₃Se₈: A New Candidate of 1D Van der Waals Materials for Field‐Effect Transistors