The dependence of Si/A&lt;inf&gt;III&lt;/inf&gt;B&lt;inf&gt;V&lt;/inf&gt; light source photoluminescence efficiency on dynamic displacements of atoms in the crystal lattice

Osinsky, Vladimir; Deminskyi, Petro; Lyahova, N. N.; Syhoviy, Nina; Honarmand, Hooshmand

doi:10.1109/elnano.2014.6873938

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Quantum Analogy Between Heterogeneous Alloys and Photosynthe1

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2017

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“…Integrated LED/SC matrixes can be made using MOCVD on Si substrate with transistor microstructures [9] and InGaN/GaN defect-free nanorods with sitecontrolled quantum dots [10] due to heterogeneous growth.…”

Section: Quantum Analogy Between Heterogeneous Alloys and Photosynthementioning

confidence: 99%

Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

Osinsky¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on A III B V direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.

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Section: Quantum Analogy Between Heterogeneous Alloys and Photosynthementioning

confidence: 99%

Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

Osinsky¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

The dependence of Si/A<inf>III</inf>B<inf>V</inf> light source photoluminescence efficiency on dynamic displacements of atoms in the crystal lattice

Cited by 1 publication

References 9 publications

Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

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