The dependence of ellipsometric parameters Δ and Ψ on refractive index of superficial film

The CORE Sequence: A Nanoscale Fluorocarbon-Free Silicon Plasma Etch Process Based on SF6/O2Cycles with Excellent 3D Profile Control at Room Temperature

“…[73][74][75][76] In the model we assumed a growing silicon monoxide (SiO, n = 2.0) to be present, so we should have found a Δ-value of 0.54 nm. 77 This is still not the 0.84 nm offset we found, therefore we further propose the presence of an additional Si-OH interfacial layer bridging the Si-O and adsorbed water. So, when we measure plasma oxidation, we measure as well a layer of Si-OH with a few monolayers of water.…”

“…These surfaces are highly hydrophilic and consequently between 3 and 4 monolayers of water ought to be present (at 22.5 o C and 45%RH), corresponding to roughly 1nm of (ice-like) water having a refractive index of 1.31 [73][74][75][76] . In the model we assumed a growing silicon monoxide (SiO, n=2.0) to be present, so we should have found a ∆-value of 0.54nm 77 . This is still not the 0.84nm offset we found, therefore we further propose the presence of an additional Si-OH interfacial layer bridging the Si-O and adsorbed water.…”