The dependence of coating in inductive R.F. plasmas on gas flow velocity, pressure and R.F. power

Khait, Yu. L.; Inspektor, A.; Avni, R.

doi:10.1016/0040-6090(80)90006-1

Cited by 18 publications

(28 citation statements)

References 7 publications

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“…The hot spots are created by the fluxes of plasma ions of energy is ϭ20-100 eV bombarding the film during time ⌬t ps of film exposure to the plasma. 6,7,16 The kinetics of the PAC of Si and crystallite parameters are determined by the properties and frequencies of the hot spots formed in the material by the EPI fluxes.…”

Section: ͑21͒mentioning

confidence: 99%

“…1͒. 6,7,16 The HDS includes the following kinetically coupled components: the plasma bulk ͑PB͒, near-surface plasma layer ͑PL͒, solid surface, and the near-surface material layer ͑ML͒. The components of the HDS have different characteristics and, therefore, properties, and a description of them requires the application of different methods.…”

Section: ͑21͒mentioning

confidence: 99%

“…We suggest that, in general, the observed substantial enhancement in Si crystallization in low temperature a-Si:H films exposed to gas plasma is caused by dynamic plasmasolid interaction. This interaction, proposed in our earlier work, related to other plasma-assisted processes, 6,7 consists of a great number of nanoscopic picosecond dynamic events generated by energetic plasma ions ͑EPIs͒ impinging on the film surface. EPIs of energy ⑀ is ϭ20-100 eV are formed in the thin near-surface plasma layer due to the plasma-surface voltage accelerating the EPIs towards the surface.…”

Section: Introductionmentioning

confidence: 98%

“…EPIs of energy ⑀ is ϭ20-100 eV are formed in the thin near-surface plasma layer due to the plasma-surface voltage accelerating the EPIs towards the surface. 6,7 One of the main kinds of phenomena involved in plasma surface interaction is the formation of sequences of very many simultaneously occurring nanometer short-lived picosecond hot spots, referred to henceforth as hot spots. They are generated on the surface and near-surface material layer by fluxes of plasma ions impinging on the surface during ͑time ⌬t ps ) plasma-surface interaction.…”

Section: Introductionmentioning

confidence: 99%

“…The above conclusions that from the proposed kinetic nanoscopic model of Si crystallization in a-Si:H are in agreement with observations. The kinetic model of PAC of Si in a-Si:H suggested combines the nanoscopic kinetic model of plasma surface interaction 6,7 with some ideas and results used successfully in our previous papers related to the following processes: ͑i͒ the thermal crystallization of a-Si:H without and under the influence of metal contacts; 8,9 ͑ii͒ structural changes in a-Si:H ͑and some other amorphous ma-terials͒ caused by laser irradiation; 10 ͑iii͒ the thermal crystallization of doped a-Si; 11 ͑iv͒ thermal hydrogen desorption from a-Si:H. 12 These applications of the nanoscopic kinetic model to the purely thermal and laser-induced crystallization of amorphous silicon ͑including the incubation period of the crystal-lization͒, which are in good agreement with experimental data, [8][9][10][11] lead to the following important conclusions. The formation of every crystallite nucleus which contains many silicon atoms proceeds via a great number of small picosecond nanometer steps towards a more ordered state of these atoms since initially these atoms are in a disordered state.…”

Section: Introductionmentioning

confidence: 99%

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Low temperature nanoscopic kinetics of hydrogen plasma-enhanced crystallization of a-Si:H films

Khait

Weil

Beserman

et al. 2003

Journal of Applied Physics

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A nanoscopic kinetic model of controlled plasma-assisted microcrystallite formation ͑PACF͒ of Si in pre deposited a-Si:H films at low temperatures is proposed. The model suggests mechanisms for enhancement of the Si crystallization in a-Si:H films at low temperatures by treatment of the films in plasma. The model reveals certain kinetic advantages of hydrogen plasmas for the formation of Si crystalline nuclei in a-Si:H compared to other plasmas ͑Ar plasma, etc.͒. These advantages make the hydrogen plasma substantially more efficient in the PACF of Si in a-Si:H films. The proposed mechanism for PACF of Si is associated with the formation on the surface of the a-Si:H film and in the adjacent nanometer material layer of nanoscale ͑picosecond͒ short-lived hot spots of high energy density ͑or effective temperature͒. The hot spots are generated in the material by energetic plasma ions of energy is ϭ20-100 eV accelerated by the electrical field in the thin plasma layer near the solid surface. The hot spots promote Si crystallization in a-Si:H. It is shown how the plasma composition, energy, mass, and fluxes of the plasma ions impinging on the surface of the a-Si:H film determine the Si nucleation rate and density of Si microcrystallization.

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Section: ͑21͒mentioning

confidence: 99%

Section: ͑21͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%