2008
DOI: 10.1063/1.2976634
|View full text |Cite
|
Sign up to set email alerts
|

The density of states in thin film copper phthalocyanine measured by Kelvin probe force microscopy

Abstract: Articles you may be interested inLow-density band-gap states in pentacene thin films probed with ultrahigh-sensitivity ultraviolet photoelectron spectroscopy Appl. Phys. Lett. 95, 183303 (2009); 10.1063/1.3258351 Morphology and conductivity modification of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) films induced by conductive atomic force microscopy measurements

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
34
2

Year Published

2012
2012
2021
2021

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 40 publications
(39 citation statements)
references
References 13 publications
3
34
2
Order By: Relevance
“…This description is similar to the mobility edge picture developed for amorphous inorganic semiconductors, especially hydrogenated amorphous silicon, in which the mobility edge separates extended states from the localised ones. The distribution of traps below the transport level could be described by an exponential region [39]. In analogy to inorganic semiconductors, this exponential region of the DOS can be assumed to be a band tail of localised states induced by structural disorder.…”
Section: Resultsmentioning
confidence: 99%
“…This description is similar to the mobility edge picture developed for amorphous inorganic semiconductors, especially hydrogenated amorphous silicon, in which the mobility edge separates extended states from the localised ones. The distribution of traps below the transport level could be described by an exponential region [39]. In analogy to inorganic semiconductors, this exponential region of the DOS can be assumed to be a band tail of localised states induced by structural disorder.…”
Section: Resultsmentioning
confidence: 99%
“…[ 19 ] Increased order at the donor-acceptor interface could also lead to a change in the density of states for holes and electrons, so that disorderinduced gap tail states are reduced, increasing the electron quasi-Fermi level and decreasing the hole qausi-Fermi level, increasing V OC . [ 13b , 20 ] This hypothesis seems to fi t the observed losses in the open-circuit voltages, as the changes in V loss are within the range expected for disorder-induced gap tail states (0.1-0.2 eV), [ 21 ] while effects from CT-state coupling are known to cause signifi cantly larger changes in the V OC . [ 16c ] Transmission electron microscopy (TEM) was used to examine the bulk-heterojunction fi lms of the molecules for evidence of self-assembly and improved order.…”
Section: Consideration Of Electrostatic Interactionsmentioning
confidence: 96%
“…The concept of disorder induced tail states in HOMO and LUMO energy levels of donor and acceptor materials is introduced to explain the observed behavior of V oc . The distribution of these tail states usually follows the Gaussian distribution [34,35]. We have considered the concept of disorder parameter r, which accounts for the broadening of density of states (DOS) and has effect on V oc as shown in the modified equation [36,37]:…”
Section: Resultsmentioning
confidence: 99%