2012
DOI: 10.1016/j.jeurceramsoc.2012.04.030
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The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film

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Cited by 45 publications
(22 citation statements)
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“…[10][11][12] Improvement of the optical and electrical properties of ZnO based thin films for optoelectronic devices have been widely investigated by different authors. Electrical resistivity values between 10 −3 and 10 −4 cm have been presented, [10][11][12][13][14][15][16] which are comparable to that of indium tin oxide (ITO) films. 17,18 Al-doped ZnO (AZO) has many advantages over ITO as a transparent conducting oxide (TCO), owing to its low cost, abundance, high thermal stability and absence of toxicity.…”
Section: Introductionmentioning
confidence: 99%
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“…[10][11][12] Improvement of the optical and electrical properties of ZnO based thin films for optoelectronic devices have been widely investigated by different authors. Electrical resistivity values between 10 −3 and 10 −4 cm have been presented, [10][11][12][13][14][15][16] which are comparable to that of indium tin oxide (ITO) films. 17,18 Al-doped ZnO (AZO) has many advantages over ITO as a transparent conducting oxide (TCO), owing to its low cost, abundance, high thermal stability and absence of toxicity.…”
Section: Introductionmentioning
confidence: 99%
“…21 Several studies have been reported about AZO sputtering targets preparation and respective thin films deposition and characterization. [10][11][12][19][20][21][22][23][24][25][26] However, most of them are produced using micropowder composites obtained by mechanical grinding method and do not focus on the optimization of target properties. Studies correlating the properties of nanostructured composite powders, the sintering process of the targets and corresponding thin film properties are hardly found.…”
Section: Introductionmentioning
confidence: 99%
“…The resistivities of ZnO and AZO ceramics sintered at 1300 C were 430 ± 23 U cm and 6.0 Â 10 À2 ± 1.1 Â 10 À2 U cm, respectively. The results showed that the addition of 2 wt% Al 2 O 3 sufficiently improved the conductivity of ZnO ceramics after pressureless sintering due to the doping effect of Al 2 O 3 [13]. Moreover, HIP treatment decreased the resistivities of the two ceramics, as shown in Fig.…”
Section: Electrical Propertymentioning
confidence: 78%
“…AZO and ZnO ceramic slurries with 30 vol% solid contents were prepared. The detailed procedures and process parameters of the two ceramic slurries were reported in a previous study [13]. These two slurries were spray-dried in 140 C air using a rotary spray dryer (L-8, Ohkawara Kakohki Co., Yokohama, Japan) to produce free-flowing granulated powders.…”
Section: Methodsmentioning
confidence: 99%
“…Recently, the correlations between TCO targets and films and the processes and properties of aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) ceramic targets have received much focus [7,8,11,12]. Several studies have found that the characteristics of sputtering targets affect both the film properties and the sputtering process [4,7,8,13,14].…”
Section: Introductionmentioning
confidence: 99%