The decarburization of steel in a corrosive medium

Davydov, Yu. I.; Sergeev, N. N.; Ageev, V. S.

doi:10.1007/bf00722900

Cited by 2 publications

(2 citation statements)

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“…It was found that the interferometer gives a reliable depth calibration when it is used for the crater measurement in a depth range of 50-100 nm. 11,12 Both models, however, require a quite high Cs coverage of 25%-50%, while the theoretical calculations of the Cs surface coverage show a merely low ͑below 10%͒ Cs coverage for all conditions used practically. However, the sputter rate measured near the surface could be wrong.…”

Section: Resultsmentioning

confidence: 99%

Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

Chambost

Merkulov

Schuhmacher

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J. Depth scale distortions in shallow implant secondary ion mass spectrometry profilesThe challenge for secondary ion mass spectroscopy is to accurately measure the profile shape for low-energy implants within the first few nanometers as well as to precisely determine the junction depth in the structure after any thermal treatment. Even if knowledge of the exact profile shape is not required for dose measurement, this information becomes essential for process modeling. This article presents results on the accurate determination in depth distribution of shallow As and P implants in Si. Sub-keV impact energy is investigated for O 2 ϩ and Cs ϩ primary ions. An in situ laser interferometer providing a real-time record of the sputter rate is used for the depth scale calibration. Fundamental and instrumental effects limiting the depth resolution, the sensitivity, and the accuracy are discussed.

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Section: Resultsmentioning

confidence: 99%

Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

Chambost

Merkulov

Schuhmacher

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…Just to mention two examples of applications, semiconductors covered with alkali metals have been used as infrared detectors, 1 and also to speed up the oxidation of silicon and germanium. [2][3][4][5] Adsorption induced reduction of symmetry, on the other hand, is a general phenomenon seen as formation of various adsorbate induced superstructures. The peculiarity of metal adsorption, e.g., on Si͑111͒ [6][7][8] and for adsorption of sodium on Si͑100͒ 9,10 is the formation of chain structures, which have in part remarkably large periodicities between the chains.…”

Section: Introductionmentioning

confidence: 99%