“…To comprehend which mechanisms control the conduction in the Al/ p -Si/MEH-PPV/Ag structure, the log–log forward-bias current–voltage plot is shown in Fig. 13 , 30 displaying power-law behavior of the current according to the expression 31 Fig. 13 Log I versus Log V characteristic of Al/ p -Si/MEH-PPV/Ag organic device in the dark at room temperature; the solid red line indicates the two different regions.…”
Section: Resultsmentioning
confidence: 99%
“…To comprehend which mechanisms control the conduction in the Al/p-Si/MEH-PPV/ Ag structure, the log-log forward-bias current-voltage plot is shown in Fig. 13, 30 displaying power-law behavior of the current according to the expression 31 IaV m ; ð17Þ…”
Section: Capacitance-voltage Characteristics In the Dark At Room Temperaturementioning
An Al/p-Si/poly[2-methoxy-5-(2-ethylhexoxy)-p-phenylenevinylene] (MEH-PPV)/Ag organic heterojunction has been prepared using homemade ultrasonic spray pyrolysis (USP) equipment for deposition of the organic thin film and physical vapor deposition (PVD) for the metallic contacts. The organic layer produced on glass was analyzed by optical and morphological methods. The bandgap of the organic thin film was found to be $ 2.03 eV with a thickness of around 140 nm, using ultraviolet-visible (UV-Vis) and scanning electron microscopy (SEM) characterization, respectively. The amorphous nature of the MEH-PPV polymer was confirmed by its x-ray diffraction pattern. To determine the electrical parameters, the heterojunction based on MEH-PPV was characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark at room temperature. The ideality factor and barrier height of the organic heterojunction were found to be 3.6 eV and 0.56 eV to 0.59 eV, respectively, with an average series resistance of 94.39 X, based on the I-V characteristics. The barrier height was also calculated based on the capacitance-voltage measurements, yielding slightly different results due to the applied frequencies of 10 kHz (/ B ¼ 0:50) and 1 MHz ð/ B ¼ 0:74Þ, respectively.
“…To comprehend which mechanisms control the conduction in the Al/ p -Si/MEH-PPV/Ag structure, the log–log forward-bias current–voltage plot is shown in Fig. 13 , 30 displaying power-law behavior of the current according to the expression 31 Fig. 13 Log I versus Log V characteristic of Al/ p -Si/MEH-PPV/Ag organic device in the dark at room temperature; the solid red line indicates the two different regions.…”
Section: Resultsmentioning
confidence: 99%
“…To comprehend which mechanisms control the conduction in the Al/p-Si/MEH-PPV/ Ag structure, the log-log forward-bias current-voltage plot is shown in Fig. 13, 30 displaying power-law behavior of the current according to the expression 31 IaV m ; ð17Þ…”
Section: Capacitance-voltage Characteristics In the Dark At Room Temperaturementioning
An Al/p-Si/poly[2-methoxy-5-(2-ethylhexoxy)-p-phenylenevinylene] (MEH-PPV)/Ag organic heterojunction has been prepared using homemade ultrasonic spray pyrolysis (USP) equipment for deposition of the organic thin film and physical vapor deposition (PVD) for the metallic contacts. The organic layer produced on glass was analyzed by optical and morphological methods. The bandgap of the organic thin film was found to be $ 2.03 eV with a thickness of around 140 nm, using ultraviolet-visible (UV-Vis) and scanning electron microscopy (SEM) characterization, respectively. The amorphous nature of the MEH-PPV polymer was confirmed by its x-ray diffraction pattern. To determine the electrical parameters, the heterojunction based on MEH-PPV was characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark at room temperature. The ideality factor and barrier height of the organic heterojunction were found to be 3.6 eV and 0.56 eV to 0.59 eV, respectively, with an average series resistance of 94.39 X, based on the I-V characteristics. The barrier height was also calculated based on the capacitance-voltage measurements, yielding slightly different results due to the applied frequencies of 10 kHz (/ B ¼ 0:50) and 1 MHz ð/ B ¼ 0:74Þ, respectively.
“…The origin of the current is from the bulk generated electrons of the film, rather than the injected free carriers. Here, tunneling is the main contributing factor that can be observed from the I – V curve …”
A nickel(II)/lead(II) coordination
polymer [(NCS)Pb(H
2
O)LNi(NCS)]
n
{H
2
L =
N
,
N
′-bis(3-methoxysalicylidene)propane-1,3-diamine}
has been synthesized and characterized. The band gap (3.18 eV) calculated
from Tauc’s plot suggests the semiconducting nature of the
complex. The material has a photosensitivity of 5.76, indicating its
applicability in the fabrication of photosensitive devices. The complex
has been successfully applied in a technologically challenging thin-film
photosensitive Schottky device.
“…The slope of the plot at high voltages tends to decrease since the device approaches the "trap-filling" limit when the injection level is high whose dependence is the same as in the trap-free SCLC. 25,26) The forward and reverse bias CV characteristics of the Yb/p-InP Schottky barrier diode measured at room temperature under various frequencies as a function of applied bias voltage are shown in Fig. 5.…”
The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by currentvoltage (IV), capacitancevoltagefrequency (CVf ) and conductancevoltagefrequency (GVf ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (IV)/0.79 eV (CV) and 1.24, respectively. As well, the values of barrier heights, ideality factors and series resistance are estimated by Cheung and Norde methods are compared. Under forward bias conditions, ohmic and space charge limited conduction (SCLC) mechanisms are identified at low and higher voltages, respectively. The CV characteristics of the Yb/p-InP Schottky diode are also measured at different frequencies at room temperature. Further, the Cf and Gf measurements of the Yb/p-InP Schottky diode are performed at various biases. The interface state density N ss and relaxation time¸of the diode are estimated from the Cf and Gf measurements. The N ss and the¸show a decrease with bias from the top of the valence band toward the midgap. The profile of series resistance dependent on frequency and voltage confirms the presence of interface states in Yb/p-InP Schottky structure.
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