The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch

Abstract

In this report, a delta-doped triple-barrier regenerative switching device is studied. The device is composed of a p+-n junction in series with a triple-barrier unipolar diode. One barrier is induced by a δn+-i-δp+-i-δn+ structure. The gate electrode is placed on the two barriers near the substrate. Three-terminal voltage-controlled and current-controlled current-voltage characteristics are shown. The ratio V S/V H of switching to holding voltage is more than 3 under bias. At positive gate-to-cathode (GC) bias, the switching voltage decreases with the increase of gate bias and then saturates to some value when the bias is more than 0.5 V. The switching phenomena still appear at high positive GC bias. At negative GC bias, holes, trapped in the potential well of holes, are from diffusion current or generated by avalanche breakdown.