Abstract:We have detected a Si hexagonal phase in wafers implanted at high dose
rate, P-type, 2-12 Ωcm, <001> oriented Si wafers were implanted by 80
keV As+ ions to a dose of
1016/cm2 at a current of 100
μA. These samples, without further heat treatment, were analyzed by TEM
observations. The hex Si appears as a few hundred Å long rods elongated in
the matrix <110… Show more
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