The crystalline structure, conductivity and optical properties of Co-doped ZnO thin films

Effect of iron doping on structural, optical and electrical properties of sprayed In2O3 thin films

“…The estimated values of E g for iron doped indium oxide films decreases after doping with iron from 3.45 eV to 3.29 eV. This observed decrease of the band gap energy after doping may be due to an increase of the grain size [29] as shown in Fig. 4.…”

Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

“…ZnO is a very most important semiconductor material due to its applications [1]. It has a direct and wide band gap of 3.3eV in the near-UV spectral region [2], and a large exciton binding energy (60meV) at room temperature [3]. It consider that the ZnO is an n-type semiconducting with high density and good crystalline quality [4], but the use of ZnO as a semiconductor in electronic devices due to the high transmittance and good electrical conductivity [5].…”

“…It consider that the ZnO is an n-type semiconducting with high density and good crystalline quality [4], but the use of ZnO as a semiconductor in electronic devices due to the high transmittance and good electrical conductivity [5]. Therefore, ZnO thin films are promising candidates for applications in short-wavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [1][2][3][4][5][6]. Nanocrystalline ZnO thin films can be produced by several techniques such as reactive evaporation [7], molecular beam epitaxy (MBE), magnetron sputtering technique [8], pulsed laser deposition (PLD) [9], spray pyrolysis [10], sol-gel process [11], chemical vapor deposition, and electrochemical deposition [12].…”

Study of the Optical Properties and Structure Zinc Oxide Thin Films Prepared by Spin Coating Technique

“…ZnO is a very most important semiconductor material due to its applications [4]. It has a direct and wide band gap of 3.3 eV in the near-UV spectral region [5], and a large exciton binding energy (60 meV) at room temperature [6]. Its consider that the ZnO is an n type semiconducting with high density and good crystal-line quality [7], but the use of ZnO as a semiconductor in electr-onic devices due to the high transmittance and good electrical conductivity [8].…”

“…Its consider that the ZnO is an n type semiconducting with high density and good crystal-line quality [7], but the use of ZnO as a semiconductor in electr-onic devices due to the high transmittance and good electrical conductivity [8]. Therefore, ZnO thin films are promising candid-ates for applications in shortwavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [4][5][6][7][8][9][10].…”