GPa [2] (48 GPa (0.5 N) [3]) or 26.6 GPa (39.3 GPa (0.5 N)) [2] with rather different hardness values due to the anisotropic crystal structure (for details on the crystal structure of W 1−x B 3 , see [4]). Vicker's hardness measurements on the boron richest iridium boride IrB 1.35 revealed a load independent value of 18.2 GPa (at 9.81 N) but 49.8 GPa at 0.49 N [5] and at such low loads the hardness is therefore comparable with bulk samples of ReB 2 . Quite high hardness values were also recorded for IrB 1.1 thin films (on SiO 2 substrate) revealing an intrinsic film hardness of 43(±5) GPa [6].Investigations on the constitution of the binary system Ir-B revealed the existence of three compounds Ir 3 B 2 , IrB and IrB 2 [7−9]. Some of the early reports were mainly concerned with the metal-rich eutectic (1046°C at 21.4 at.% B [10]), with the optimization of synthesis techniques [8] and with the stability of IrB 1.1 against various acids and bases [11]. Melting point (T m = 1190 ± 20°C), microhardness 1652 ± 80 kgf/mm 2 , Seebeck coefficient (20−800°C, S V , min = −9 μV/K at 350°C) and electrical resistance (20−800°C) for IrB 1.1 were reported by Samsonov et al. [8]. X-ray powder and single crystal (Weissenberg) photographs served to evaluate the crystal structure of IrB 1.1 , which was reported to be isotypic with the α-ThSi 2 structure type (space group I4 1 /amd; a = 0.2810, c =1.0263 nm) exhibiting a severe defect at the boron sites (8e sites randomly occupied by ~50% of B atoms) [12]. For the compound richest in boron, 'IrB 2 ' , monoclinic symmetry (space group C2/m) was established from X-ray single crystal multi-film Weissenberg photographs yielding a crystal structure described as a stacking of puckered boron layers (A) and puckered double layers of metal atoms (B) in the simple sequence ABAB in c-direc-