The Crystal Structure of Hf(OH)2SO4H2O.

Hansson, Margareta; Kolsaker, Per; Seip, H. M.; Willadsen, T.; Borch, Gunner; Craig, J. Cymerman

doi:10.3891/acta.chem.scand.23-3541

Cited by 16 publications

(12 citation statements)

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“…Several structures have been characterized as simple hydrates, e.g., Hf(SO 4 ) 2 · nH 2 O or Zr(SO 4 ) 2 · nH 2 O, [12] exhibiting variations in the degree of hydration and in the structural dimensionality associated with the condensation of the metal atom, sulfate groups, and water. Materials rich in metal relative to sulfate are known, and they include Zr 2 (OH) 2 (SO 4 ) 3 · 4H 2 O; [13] Hf(OH) 2 SO 4 , Zr(OH) 2 SO 4 , and their hydrates; [14][15][16][17][18] [19,20] and Zr 3 O 5 SO 4 and its hydrate. [21] Additional, largely uncharacterized phases have also been reported.…”

Section: Precursor Chemistries and Materials Analysesmentioning

confidence: 99%

“…[16,21] Given the propensity of its formation from aqueous solution and its enhanced thermal stability, the composition with x = 0.71 exhibits special stability within this system. As noted below, this behavior extends to thin films, making this formula particularly interesting for applications where enhanced levels of chemical and thermal stability are desired.…”

Section: Full Papermentioning

confidence: 99%

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Solution‐Processed HafSOx and ZircSOx Inorganic Thin‐Film Dielectrics and Nanolaminates

Anderson

Munsee

Hung

et al. 2007

Adv Funct Materials

105

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New thin‐film dielectrics and nanolaminates have been synthesized via aqueous‐solution deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor solution have been achieved without organic additives. X‐ray reflectivity, imaging, and metal‐insulator‐metal capacitor performance reveal that smooth, atomically dense films are readily produced by spin coating and modest thermal treatment (T < 325 °C). Dielectric characteristics include permittivities covering the range of 9–12 with breakdown fields up to 6 MV cm–1. Performance as gate dielectrics is demonstrated in field‐effect transistors exhibiting small gate‐leakage currents and qualitatively ideal device performance. The low‐temperature processing, uniformity, and pore‐free nature of the films have also allowed construction of unique, high‐resolution nanolaminates exhibiting individual layers as thin as 3 nm.

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Section: Precursor Chemistries and Materials Analysesmentioning

confidence: 99%

Section: Full Papermentioning

confidence: 99%

Solution‐Processed HafSOx and ZircSOx Inorganic Thin‐Film Dielectrics and Nanolaminates

Anderson

Munsee

Hung

et al. 2007

Adv Funct Materials

105

View full text Add to dashboard Cite

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“…This means that the peroxide ligand has an uncommon property of being a differentiating ligand for Zr and Hf chemistry, allowing development of separation processes. A ligand series is emerging in which very strongly binding ligands, e.g., sulfate, ,,, or very weakly binding ligands, e.g., halides or perchlorate, lead to identical structural motifs for Hf and Zr analogues. Ligands of intermediate binding strength such as peroxide slightly alter the pre-existing Zr/Hf IV –O bonding scheme, allowing differences between the two metals to become evident.…”

Section: Introductionmentioning

confidence: 99%

Differentiating Zr/Hf^IV Aqueous Polyoxocation Chemistry with Peroxide Ligation

et al. 2021

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This work complements our recent discovery of new phases derived from zirconium perchlorate by addition of hydrogen peroxide. Here, we investigate analogous reactions with hafnium perchlorate, which is found to have modifications of the Clearfield–Vaughan tetramer (CVT). For hafnium perchlorate derivatives, we find distorted versions of CVT by X-ray diffraction and study the reaction solutions by SAXS, Raman spectroscopy, and ESI-MS. Furthermore, we investigate mixed Hf–Zr solution and solid phases and find the latter resemble the zirconium family at low Hf concentrations and the hafnium family at higher hafnium contents.

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“…The determination of HfI8010(OH)z6(SO4)13(HzO)33 forms part of a systematic investigation of crystalline basic phases appearing in the two systems Zr(Hf)Oz-803-H20 (McWhan & Lundgren, 1966;Hansson, 1969Hansson, , 1973aHansson, Lundgren & McWhan; to be published) and Zr(Hf)Oz-CrO3-H20 (Mark, 1972(Mark, , 1973Hansson & Mark, 1973).…”

Section: Introductionmentioning

confidence: 99%