The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate

Abstract

The influence of structural defects in spark plasma sintered BaSn1-xSbxO3 (BSSO, x = 0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300 – 4 K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen vacancies (VO) and mixed oxidation states of tin (Sn2+/Sn4+) in both samples. As a result, the undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperature-dependent resistivity. The electrical resistivity of the doped samples was three orders of magnitude lower than that of the undoped sample. The presence of structural defects such as VO, mixed oxidation states of the constituent elements, and significant amounts of O- species make the electrical resistivity of the doped sample constant in the temperature range of 300 – 70 K, indicating heavily-doped semiconductor behavior.

Glass Sintering Aid Effect on Magnetic and Dielectric Properties of YFeO3 Ceramics

“…This result indicates that the oxidation state of Ba is +2, because the spin-orbit spacing is 15.4 eV. 27 Figure 7c shows that the bismuth (Bi) 4 f spectra consist of two deconvoluted peaks with binding energies of 164.8 (Bi 4f 7/2 ) and 159.4 eV (Bi 4f 5/2 ), with a spin-orbit spacing of 5.4 eV. 28 The binding energy for Li 1 s and K 2p was observed at 55.4 eV and 299.2 eV respectively for the LKBOYFO ceramic (Figs.…”