The Crack Opening Method in Silicon Wafer Bonding: How Useful Is It?

Martini, T.; Steinkirchner, J.; Gösele, U.

doi:10.1149/1.1837409

Cited by 64 publications

(40 citation statements)

References 4 publications

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“…[3][4][5][6][7][8][9] In order to obtain the real bonding energy value, the measurement has to be done in anhydrous atmosphere. 8 Indeed as soon as siloxane bonds significantly appear at the bonding interface, during the blade insertion in humid atmosphere, the water corrodes them and the debonding length increases, reducing the apparent bonding energy.…”

Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

Water Stress Corrosion in Bonded Structures

Fournel

Martin-Cocher

Radisson

et al. 2015

ECS J. Solid State Sci. Technol.

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Direct bonding is now a well-known technique to join two flat surfaces without any additional material. This technique is used in many applications and especially in SOI (Silicon-On-Insulator) elaboration or in some backside imager manufacturing processes which are now almost in mass production. Direct bonding mechanism study is then very important in order to clearly understand this bonding behavior. Especially in the case of silicon or silicon dioxide hydrophilic surface, the role of water is essential. Water could lead to lots of different reactions at the bonding interface and especially the water stress corrosion could play an important role in the direct bonding mechanism.

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Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

Water Stress Corrosion in Bonded Structures

Fournel

Martin-Cocher

Radisson

et al. 2015

ECS J. Solid State Sci. Technol.

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“…Directly bonded Si/SiO 2 || Si 3 N 4 /Si wafers had interfacial bonding energy of 1750 mJ/m 2 , which is close to the value measured for the Si || Si wafers; however, above 1000 o C, the interface bonding energy rose to 2344 mJ/m 2 . Considering that the error involved in the razor-blade crackopening method is ~20 % [23], the interfacial bonding energy monotonically increased with annealing temperature and reached its maximum above 1000 o C. Because of possible wafer warping and thermal expansion mismatch above 1000 o C, 1000 o C appears to be the maximum annealing temperature for this process.…”

Section: Resultsmentioning

confidence: 99%

Direct bonding of silicon paris with heterogeneous insulator using different annealing methods

et al. 2004

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We prepared SOI (silicon-on-insulator) wafer pairs of 2000 Å -SiO 2 /Si(100) and 560 Å-Si 3 N 4 /Si(100) by CFA (Conventional electric Furnace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100 % above 450 o C for RTA, and 400 o C for CFA. The maximum bond strength of the SiO 2 / Si 3 N 4 wafer pair was 2344, 2300, and 195 mJ/m 2 for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO 2 and Si 3 N 4 films compared to the CFA and RTA methods.

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“…For instance in a microelectronic clean room environment, 40% RH is often imposed for photolithography purpose. Then as already mentioned by different authors 1,[5][6][7][8] , stress corrosion may appear at the crack front especially if siloxane bonds (Si-O-Si) are involved in the direct bonding. The stress corrosion of siloxane bonds is well known for many years when studying the crack propagation in glass [9][10][11][12][13] .…”

Section: Introductionmentioning

confidence: 92%

(Invited) Direct Bonding Energy in Anhydrous Atmosphere

et al. 2013

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Direct bonding energy is an important parameter for direct bonding applications as well as for mechanism elaboration. Thanks to its simplicity as well as for its simple result interpretation, double cantilever beam (DCB) under prescribed displacement is the most used technique to measure the direct bonding energy. But, as shown also in this study, measurement of Si/SiO 2 or SiO 2 /SiO 2 direct bonding in standard humid atmosphere is greatly impacted by water stress corrosion. To prevent this effect, bonding energies have been evaluated under anhydrous atmosphere with less than 0.2ppm of water in nitrogen. After the setup and methodology description of the bonding energy measurement without stress corrosion influence, the global classical Si/SiO 2 and SiO 2 /SiO 2 direct wafer bonding energy curves versus post-bonding annealing temperature are revisited. Moreover, by using various surface treatments prior to bonding, the bonding energy behavior according to post-bonding annealing can drastically change as for example with plasma surface activation treatment. But in contrary, silicon-silicon hydrophobic bonding energy seems not impacted by the measurement atmosphere. Such results will also be presented and discussed.

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The Crack Opening Method in Silicon Wafer Bonding: How Useful Is It?

Cited by 64 publications

References 4 publications

Water Stress Corrosion in Bonded Structures

Water Stress Corrosion in Bonded Structures

Direct bonding of silicon paris with heterogeneous insulator using different annealing methods

(Invited) Direct Bonding Energy in Anhydrous Atmosphere

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