The context of REDD+ in Ethiopia: Drivers, agents and institutions

Bekele, Melaku; Tesfaye, Yemiru; Mohammed, Zerihun; Zewdie, Solomon; Tebikew, Yibeltal; Brockhaus, Maria; Kassa, Habtemariam

doi:10.17528/cifor/005654

Cited by 3 publications

(2 citation statements)

References 24 publications

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“…ha between 1990 and 2015 and this corresponds to annual loss of 104,000 ha forest area. Free livestock grazing, fuelwood or charcoal production followed by farmland expansion, forest fires and unsustainable wood harvesting for construction have been the main causes of forest area loss in Ethiopia (Bekele et al, 2015).…”

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confidence: 99%

Soil carbon stocks in Ethiopian forests and estimations of their future development under different forest use scenarios

et al. 2020

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Contributions from all land-uses are needed if Ethiopia is to fulfil its Paris Agreement targets. The magnitude of soil carbon stock and the role of Ethiopian forest soils in climate change mitigation has not yet been clarified. In this study, soil carbon inventory in forests was carried out as a part of the Ethiopia REDD+ Programme. The performance of soil carbon models Yasso07 and CENTURY was tested by comparing the model predictions with the empirical soil organic carbon (SOC) data provided by the field inventory. In addition to that, Global Soil Organic Carbon (GSOC) map estimates by the Food and Agriculture Organization for Ethiopia were included in the comparison. The soil inventory was carried out in 2017-2018 at a subset of permanent sampling units of the National Forest Inventory conducted in 2014-2017. A combination of soil inventory data, soil carbon models and satellite images enabled to quantify the impact of forest use intensity to future SOC sinks in Ethiopian forests in a novel way. The Yasso07 and CENTURY models provided similar SOC estimates to the measured data for all biomes, and the GSOC map overestimated in biomes with larger SOC stocks. Results showed that Moist Afromontane forest biome contains twice as much SOC per unit area compared to Combretum-Terminalia forest biome and three-times more SOC compared to Acacia-Commiphora. Results underlined that sustainable forest management has a high potential for soil carbon development in Ethiopian forests in near future, impacting the ability of the Country to achieve its Paris Agreement targets.

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confidence: 99%

Soil carbon stocks in Ethiopian forests and estimations of their future development under different forest use scenarios

et al. 2020

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“…(100) β-Ga 2 O 3 can act as substrates to grow high-Al doping and crack-free AlGaO alloys, favoring great advantages in device applications [34]. And the two-dimensionalelectron gas can be formed in AlGaO/GaO heterostructures [35,36], enabling excellent mobility with high charge density in modulation doped field effect transistors, which has been demonstrated by Krishnamoorthy et al [37,38]. However, there are few reports about (100) β-Ga 2 O 3 directly grown on (0006) sapphire substrate, which may be limited by the requirement of low growth temperature [39].…”

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confidence: 99%

Preparation of β-Ga₂O₃ films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors

Zhu¹,

Li²,

Xiu³

et al. 2022

J. Phys. D: Appl. Phys.

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β-Ga2O3 films have been prepared on (0001) sapphire substrates with different off-axis angles toward <11-20> by Sol-Gel method and the solar-blind ultraviolet photodetectors (PDs) with metal-semiconductor-metal structure have been fabricated on these films. The effects of off-angled sapphire substrates on the surface morphology and crystal quality of β-Ga2O3 films have been systematically investigated, and all the results indicate that to some extent the larger off-angled sapphire substrate could lead to the smoother surface morphology and higher crystal quality of β-Ga2O3 films. Reduction in the numbers of in-plane rotational domains for β-Ga2O3 films on off-angled substrates may result in the above-mentioned improvement, which have been confirmed by XRD ϕ-scan. And β-Ga2O3 film grown on ~7° off-angled sapphire substrate has (400) preferred orientation with the single-domain growth mode. Besides, the performance of β-Ga2O3 PDs fabricated on different off-angled substrates show the same trend with changing the off-axis angles. The β-Ga2O3 PD fabricated on ~7° off-angled sapphire substrate has excellent optical characteristics with large photocurrent to dark current ratio of 430.53 and high UV-visible rejection ratio of 1420. These results would be helpful for improving the crystal-quality of hetero-epitaxy β-Ga2O3 films by using off-angled sapphire substrates and fabricating the cost-effective mass-producible solar-blind ultraviolet PDs by Sol-Gel method.

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Policy progress with REDD+ and the promise of performance-based payments: A qualitative comparative analysis of 13 countries

Brockhaus¹,

Korhonen-Kurki²,

Sehring³

et al. 2015

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The context of REDD+ in Ethiopia: Drivers, agents and institutions

Cited by 3 publications

References 24 publications

Soil carbon stocks in Ethiopian forests and estimations of their future development under different forest use scenarios

Soil carbon stocks in Ethiopian forests and estimations of their future development under different forest use scenarios

Preparation of β-Ga₂O₃ films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors

Policy progress with REDD+ and the promise of performance-based payments: A qualitative comparative analysis of 13 countries

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The context of REDD+ in Ethiopia: Drivers, agents and institutions

Cited by 3 publications

References 24 publications

Soil carbon stocks in Ethiopian forests and estimations of their future development under different forest use scenarios

Soil carbon stocks in Ethiopian forests and estimations of their future development under different forest use scenarios

Preparation of β-Ga2O3 films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors

Policy progress with REDD+ and the promise of performance-based payments: A qualitative comparative analysis of 13 countries

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Preparation of β-Ga₂O₃ films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors