The Constraints on Quantum-Dot Semiconductor Optical Amplifiers for Multichannel Amplification

Wong, HC; Ren, GB; Rorison, JM

doi:10.1109/lpt.2006.881667

Cited by 23 publications

(9 citation statements)

References 11 publications

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“…We developed a rate equation model to describe the electron dynamics in an inhomogeneous array of QDs interacting with a number of photons, based on an extension of the Sugawara model [9]. In our model carriers fill the deeper dots preferentially reflecting a room temperature scenario [10]. The model is solved as a set of rate equations which includes the inhomogeneous carrier population, multimode photon density and the temperature dependence.…”

Section: Introductionmentioning

confidence: 99%

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Sun

Rorison

2011

Phys. Status Solidi C

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It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is broadened resulting from band‐tailing, localised states or conduction band edge fluctuations. In this paper we develop a model for N compositional fluctuations causing conduction band edge fluctuations which localise the electrons into the resulting quantum dots (QDs). The electron dynamics in the QDs and QW states are examined using a rate equation approach and the carrier populations presented as a function of barrier height and temperature. This mechanism could lead to broad gain in GaInAsN QW structures which could be useful for broad band SOAs for optical communications (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Sun

Rorison

2011

Phys. Status Solidi C

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“…suppressing the amplitude fluctuations at "ones", as well as the wavelength conversion performance through the XGM effect, have been demonstrated up to 40 Gbit/s. The capability of the QD-SOA as multi-channel amplifier has been theoretically explored in [9] whilst in [10] it has been shown that 2-channel multi-wavelength regeneration based on the XGM effect can also be feasible at high bit rates.…”

Section: Introductionmentioning

confidence: 99%

Multi-Wavelength Regenerative Amplification Based on Quantum-Dot Semiconductor Optical Amplifiers

Sygletos

Spyropoulou

Vorreau³

et al. 2007

2007 9th International Conference on Transparent Optical Networks

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“…In literature, multi-wavelength operation in QD-SOAs has been numerically investigated for linear amplification [3]. Furthermore, no experimental work has been reported yet demonstrating multi-wavelength regeneration in QD-SOAs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Multi-Wavelength Regeneration Employing Quantum-Dot Semiconductor Optical Amplifiers beyond 40Gb/s

Spyropoulou

Sygletos²,

Tomkos

2007

2007 9th International Conference on Transparent Optical Networks

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In this paper, we examine for the first time to our knowledge, the potential of all optical regeneration for multiple input wavelengths at bit-rates beyond 40 Gb/s. The system parameters have been investigated assuming two and four channel operation. Successful regeneration has been achieved for two input channels at 40 Gb/s and 160 Gb/s. Four channel operation at 40 Gb/s has been investigated as well, illustrating Q-factor improvement and amplitude fluctuation suppression at the marks.

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The Constraints on Quantum-Dot Semiconductor Optical Amplifiers for Multichannel Amplification

Cited by 23 publications

References 11 publications

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Multi-Wavelength Regenerative Amplification Based on Quantum-Dot Semiconductor Optical Amplifiers

Investigation of Multi-Wavelength Regeneration Employing Quantum-Dot Semiconductor Optical Amplifiers beyond 40Gb/s

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