1996
DOI: 10.1016/0257-8972(95)02710-6
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The connection between sputter cleaning and adhesion of thin solid films

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Cited by 40 publications
(17 citation statements)
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“…The sputter cleaning process largely removed substrate surface contaminant, as well as adsorbed gas molecules, to produce a clean, highly active surface 4 ; the ion bombarding process during sputtering enhanced atomic diffusion and mixing in the nearinterface region. 24,36 The higher average adhesion strength of the monolithic HA sputtered on the rougher substrate surface (Ra = 0.7 m) than on the smoother surface (Ra = 0.06 m) might be due to a mechanical interlocking effect 2,3 that somehow was not as significant for Ti-containing coatings.…”
Section: Adhesion Strength and Microhardnessmentioning
confidence: 94%
See 1 more Smart Citation
“…The sputter cleaning process largely removed substrate surface contaminant, as well as adsorbed gas molecules, to produce a clean, highly active surface 4 ; the ion bombarding process during sputtering enhanced atomic diffusion and mixing in the nearinterface region. 24,36 The higher average adhesion strength of the monolithic HA sputtered on the rougher substrate surface (Ra = 0.7 m) than on the smoother surface (Ra = 0.06 m) might be due to a mechanical interlocking effect 2,3 that somehow was not as significant for Ti-containing coatings.…”
Section: Adhesion Strength and Microhardnessmentioning
confidence: 94%
“…It is not certain whether the observed extra peaks [such as (112)] were due to the somewhat different deposition parameters that might affect the HA coating structure. For example, Koski et al 24 suggested that, during sputter cleaning of substrate, the bombardment of energetic argon ions could change the structure of the substrate and affect the growth of the HA coating.…”
Section: Coating Thickness and Deposition Ratementioning
confidence: 99%
“…Thereafter, the substrates were introduced into the sputter chamber, in which the argon ion sputter-cleaning process was first employed to remove the adsorbed species (e.g. hydrocarbon contamination) and the native surface oxide in order to enhance the thin film adhesion [9]. Thereafter, commercial purity nickel (Ni) (N99.9%) metal disc and silicon (Si) (100) wafer targets were co-sputtered by means of 2 low energy argon ion beams (≤500 eV) generated simultaneously from two Kaufmantype ion sources.…”
Section: Methodsmentioning
confidence: 99%
“…Meanwhile contamination, the physical properties (such as surface roughness) of the substrate, film thickness, and some sputtering parameters (such as sputtering pressure, substrate temperature, and bias voltage), etc., have an effect on adhesion [24][25][26][27][28][29], which influences operational stability of electrochemical capacitors. In addition, ruthenium oxide films were deposited on Si and Ti substrates by reactive radio frequency (RF) magnetron sputtering and the total anodic voltammetric charges increased with increasing roughness factor [30].…”
Section: Introductionmentioning
confidence: 99%