The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations

Canales, Bruno G.; Carmo, Genilson Julião do; Agopian, Paula Ghedini Der

doi:10.1109/sbmicro50945.2021.9585769

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…As reported in [29], the transconductance curve of the metal gate/Si 3 N 4 /AlGaN/AlN/GaN MISHEMT presents multiple slopes due to the presence of multiple conduction channels caused by the HEMT and MIS conductions. Since the studied MISHEMT has a negative threshold voltage, with a gate voltage (V GS ) of 0 V there are three high populations of electrons, two of them are located at the 3rd and 2nd interfaces due to III-V materials heterostructure, namely two 2DEG, and one of them is located at the 1st interface, which mechanism is similar to a depletion mode nMOSFET.…”

Section: Results and Analysismentioning

confidence: 73%

“…The HEMT current, coming from the 2nd and 3rd interfaces, depends on the depletion depth, which is also affected by temperature. In addition, the bandgap also has a dependency on the temperature, playing an even major role on the HEMT conduction [29]. Figure 2 shows the MISHEMT's transfer curve (I DS × V GS ) and transconductance (g m ) curve at 350 K and low V DS .…”

Section: Results and Analysismentioning

confidence: 99%

“…The focus of this work is to understand how the multiple conduction channels of a MISHEMT, reported in [28][29][30], impact on some analog parameters of these devices, mainly the intrinsic voltage gain. This analysis is performed at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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In this paper the MISHEMT device (Metal/Si3N4/AlGaN/AlN/GaN - Metal-Insulator-Semiconductor High Electron Mobility Transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain (Av). It is shown that the total drain current is composed of 3 different drain current components, whereof one is related to theMIS channel and the other two are related to HEMT channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the Early voltage increment in the second plateau whereHEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.investigate the device saturation regime.

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Section: Results and Analysismentioning

confidence: 73%

Section: Results and Analysismentioning

confidence: 99%

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MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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“…While MIS-HEMT device presents 17 µA, 77 µA, and 194 µA, for increasing VGT from 0V to 400mV, for MOSFETs the current level for the same bias condition reaches only 0.55 µA, 2.4 µA and 7 µA, respectively. Previous works (5)(6)(7)(8) showed that the MIS-HEMT have multiple conduction mechanisms (MOS and HEMT conductions) and that these conductions are very dependent on VGT. Figure 3 shows output characteristics for several VGT voltages.…”

Section: Resultsmentioning

confidence: 99%

(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region

Perina¹,

Martino²,

Agopian³

2023

ECS Trans.

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In this work, the Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) behavior in saturation region was analyzed and compared with a GaN MOSFET. The MIS-HEMT presents a current level about 30 times higher than GaN MOSFET, for the same bias conditions. The different saturation points (VDS sat) of the MOS and HEMT conductions is responsible for the appearance of a kink in the drain current (IDS) current as a function of drain voltage (VDS) curve. The output conductance (gD) of the MOSFET presented a strong dependence on VGT, while the MIS-HEMT only a slightly dependence was observed. The MIS-HEMT kink effect (MH kink) was defined by the drain voltage where the bump occurs. The MH kink only occurs for a high enough gate bias to enable the MOS conduction, and MH kink value increases with the gate voltage overdrive (VGT) and its variation tends to saturate for VGT higher than 3,5V.

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“…On a MISHEMT with spacer layer, three current channels are formed, one at the interface between the gate insulator and the barrier layer (1 st interface), one near the interface between barrier layer and spacer layer (2 nd interface), and one at the interface between spacer layer and buffer layer (3 rd interface). The channel at the 1 st interface is an accumulation of electrons due to field effect from MIS structure, and the channels at 2 nd and 3 rd interfaces are 2DEGs formed by internal polarizations [9]. As an extension of [10], the goal of the current work is to investigate how each one of these channels affects the performance in the electrical behavior of the MISHEMT, focusing mainly on DC parameters.…”

Section: Introductionmentioning

confidence: 99%

MISHEMT’s multiple conduction channels influence on its DC parameters

Canales

Agopian

2023

JICS

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The Si3N4/ AlGaN/ AlN/ GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) analog performance was ascertained considering the device’s multiple channels. MISHEMTs with different gate lengths, source/drain electrodes depths, source/drain distances to the gate electrode and AlGaN aluminum molar fractions were analyzed. The total drain current has 3 different components, where one of them is related to MOS conduction and the other two are related to HEMT conduction. Due to their different transport mechanism and distance to the gate electrode, each channel conduction exhibits different threshold voltages, causing unusual transfer and output characteristics, such as transconductance multiple slopes and a steady output resistance. As a result, the MISHEMTs presents an unexpected increase in intrinsic voltage gain (Av) for high gate bias (strong conduction). The HEMT conduction and the conduction through all the AlGaN volume are responsible for sustaining drain current levels so high that it affects the Early voltage more strongly than the degradation of output conductance, ensuring a high Av values.

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The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations

Cited by 6 publications

References 8 publications

MISHEMT intrinsic voltage gain under multiple channel output characteristics

MISHEMT intrinsic voltage gain under multiple channel output characteristics

(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region

MISHEMT’s multiple conduction channels influence on its DC parameters

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